<div class="csl-bib-body">
<div class="csl-entry">Jorstad, N. P., Goes, W., Selberherr, S., & Sverdlov, V. (2023). Spin Drift-Diffusion Boundary Conditions for FEM Modeling of Multilayer SOT Devices. In <i>Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)</i> (pp. 357–360). https://doi.org/10.23919/SISPAD57422.2023.10319650</div>
</div>
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/190890
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dc.description.abstract
We present results obtained from solving the drift-diffusion equations for spin transport with the finite element method in a ferromagnet/heavy metal/ferromagnet (FM/HM/FM) trilayer, using boundary conditions which account for partial absorption of spins at the HM/FM interfaces. We demonstrate the flexibility of the approach by treating different levels of absorption, and by showing that in the limit of full absorption, the results obtained with the boundary conditions agree with the ones obtained from magnetoelectronic circuit theory.
en
dc.description.sponsorship
Christian Doppler Forschungsgesells
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dc.language.iso
en
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dc.subject
Spin Drift-Diffusion
en
dc.subject
FEM
en
dc.subject
Spin-orbit torque
en
dc.title
Spin Drift-Diffusion Boundary Conditions for FEM Modeling of Multilayer SOT Devices
en
dc.type
Inproceedings
en
dc.type
Konferenzbeitrag
de
dc.contributor.affiliation
Silvaco (United Kingdom), United Kingdom of Great Britain and Northern Ireland (the)
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dc.relation.isbn
978-4-86348-803-8
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dc.description.startpage
357
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dc.description.endpage
360
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dc.relation.grantno
P300686
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dc.type.category
Full-Paper Contribution
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tuw.booktitle
Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
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tuw.project.title
CD-Labor für Nichtflüchtige magnetisch-resistive Speicher und Logik
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tuw.researchTopic.id
Q4
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tuw.researchTopic.id
C6
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tuw.researchTopic.name
Nanoelectronics
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tuw.researchTopic.name
Modeling and Simulation
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tuw.researchTopic.value
50
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tuw.researchTopic.value
50
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tuw.publication.orgunit
E360-01 - Forschungsbereich Mikroelektronik
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tuw.publisher.doi
10.23919/SISPAD57422.2023.10319650
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dc.description.numberOfPages
4
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tuw.author.orcid
0000-0002-5583-6177
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tuw.event.name
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2023)
en
tuw.event.startdate
27-09-2023
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tuw.event.enddate
29-09-2023
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tuw.event.online
On Site
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tuw.event.type
Event for scientific audience
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tuw.event.place
Kobe
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tuw.event.country
JP
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tuw.event.presenter
Jorstad, Nils Petter
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wb.sciencebranch
Elektrotechnik, Elektronik, Informationstechnik
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wb.sciencebranch.oefos
2020
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wb.sciencebranch.value
100
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item.fulltext
no Fulltext
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item.openairecristype
http://purl.org/coar/resource_type/c_5794
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item.grantfulltext
restricted
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item.cerifentitytype
Publications
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item.languageiso639-1
en
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item.openairetype
conference paper
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crisitem.author.dept
E360-01 - Forschungsbereich Mikroelektronik
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crisitem.author.dept
Silvaco (United Kingdom)
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crisitem.author.dept
E360 - Institut für Mikroelektronik
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crisitem.author.dept
E360-01 - Forschungsbereich Mikroelektronik
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crisitem.author.orcid
0000-0002-5583-6177
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crisitem.author.parentorg
E360 - Institut für Mikroelektronik
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crisitem.author.parentorg
E350 - Fakultät für Elektrotechnik und Informationstechnik
