Jorstad, N. P., Goes, W., Selberherr, S., & Sverdlov, V. (2023). Spin Drift-Diffusion Boundary Conditions for FEM Modeling of Multilayer SOT Devices. In Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 357–360). https://doi.org/10.23919/SISPAD57422.2023.10319650
Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
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ISBN:
978-4-86348-803-8
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Date (published):
Sep-2023
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Event name:
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2023)
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Event date:
27-Sep-2023 - 29-Sep-2023
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Event place:
Kobe, Japan
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Number of Pages:
4
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Keywords:
Spin Drift-Diffusion; FEM; Spin-orbit torque
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Abstract:
We present results obtained from solving the drift-diffusion equations for spin transport with the finite element method in a ferromagnet/heavy metal/ferromagnet (FM/HM/FM) trilayer, using boundary conditions which account for partial absorption of spins at the HM/FM interfaces. We demonstrate the flexibility of the approach by treating different levels of absorption, and by showing that in the limit of full absorption, the results obtained with the boundary conditions agree with the ones obtained from magnetoelectronic circuit theory.
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Project title:
CD-Labor für Nichtflüchtige magnetisch-resistive Speicher und Logik: P300686 (Christian Doppler Forschungsgesells)
