<div class="csl-bib-body">
<div class="csl-entry">Behrle, R., Den Hertog, M. I., Lugstein, A., Weber, W. M., & Sistani, M. (2023). Bias Spectroscopy of Negative Differential Resistance in Ge Nanowire Cascode Circuits. In <i>ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC)</i> (pp. 37–40). IEEE. https://doi.org/10.34726/5319</div>
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/191001
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dc.identifier.uri
https://doi.org/10.34726/5319
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dc.description.abstract
In this paper, we exploit the nanometer scale properties of Ge based Schottky barrier field-effect transistors (SBFETs) with monocrystalline Al contacts, fusing the concept of reconfiguration and negative differential resistance (NDR) in a single device. Temperature dependent bias spectroscopy is used to investigate the electronic transport in the NDR regime leading to profound understanding of the involved physical transport mechanisms. Importantly, the obtained SBFETs are capable of shifting the NDR-peak by electrostatic gating. Thus, a cascode of such devices results in overlapping NDR regions, which allows the realization of new circuit topologies beyond the capabilities of conventional CMOS.
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dc.description.sponsorship
FWF - Österr. Wissenschaftsfonds
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dc.language.iso
en
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dc.rights.uri
http://rightsstatements.org/vocab/InC/1.0/
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dc.subject
Spectroscopy
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dc.subject
bias
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dc.subject
Ge nanowires
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dc.subject
transistors
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dc.title
Bias Spectroscopy of Negative Differential Resistance in Ge Nanowire Cascode Circuits