<div class="csl-bib-body">
<div class="csl-entry">Fuchsberger, A., Wind, L., Nazzari, D., Kuhberger, L., Popp, D., Aberl, J., Prado Navarrete, E., Brehm, M., Vogl, L., Schweizer, P., Lellig, S., Maeder Xavier, Sistani, M., & Weber, W. M. (2024). A Runtime Reconfigurable Ge Field-Effect Transistor With Symmetric On-States. <i>IEEE Journal of the Electron Devices Society</i>, <i>12</i>, 83–87. https://doi.org/10.1109/JEDS.2024.3350209</div>
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dc.identifier.issn
2168-6734
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/195124
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dc.description.abstract
Here, we present a Ge based reconfigurable transistor, capable of dynamic run-time switching between n-and p-type operation with enhanced performance compared to state-of-the-art Si devices. Thereto, we have monolithically integrated an ultra-thin epitaxial and defect-free Ge layer on a Si on insulator platform. To evade the commonly observed process variability of Ni-germanides, Al-Si-Ge multi-heterojunction contacts have been employed, providing process stability and the required equal injection capabilities for electrons and holes. Integration into a three top-gate transistor enables effective polarity control and efficient leakage current suppression to limit static power dissipation. Exploiting the advantages of multi-gate transistors, combinational wired-AND gates are shown to be capable of extending a single transistor to a logic gate. Notably, the obtained Al-Si-Ge multi-heterojunction reconfigurable transistors constitute the first CMOS compatible platform to combine efficient polarity control enabling the envisioned performance enhancements of Ge based reconfigurable transistors.
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dc.description.sponsorship
FWF - Österr. Wissenschaftsfonds
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dc.language.iso
en
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dc.publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
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dc.relation.ispartof
IEEE Journal of the Electron Devices Society
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dc.rights.uri
http://creativecommons.org/licenses/by/4.0/
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dc.subject
Fabrication
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dc.subject
Germanium
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dc.subject
Germanium
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dc.subject
Junctions
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dc.subject
Logic gates
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dc.subject
Molecular beam epitaxial growth
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dc.subject
Reconfigurable Field-Effect Transistor
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dc.subject
Silicon
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dc.subject
Symmetric On-State
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dc.subject
Transistors
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dc.subject
Wired-Logic
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dc.title
A Runtime Reconfigurable Ge Field-Effect Transistor With Symmetric On-States