Record link: 
https://doi.org/10.34726/hss.2024.119609
http://hdl.handle.net/20.500.12708/197048
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Title: 
Electrical impact of dislocations in lateral and quasi-vertical GaN-on-Si diodes
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Citation: 
Stabentheiner, M. (2024). Electrical impact of dislocations in lateral and quasi-vertical GaN-on-Si diodes [Dissertation, Technische Universität Wien]. reposiTUm. https://doi.org/10.34726/hss.2024.119609
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reposiTUm DOI: 
10.34726/hss.2024.119609
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CatalogPlus: 
AC17159194
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Publication Type: 
Thesis - Dissertation
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Language: 
English
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Authors: 
Stabentheiner, Manuel 
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Advisor: 
Pogany, Dionyz 
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Organisational Unit: 
E362 - Institut für Festkörperelektronik 
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Date (published): 
2024
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Number of Pages: 
116
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Keywords: 
GaN; Leistungsbauelement; Versaetzung; Defekte
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GaN; Power device; dislocation; defects
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Additional information: 
Zusammenfassung in deutscher Sprache
Abweichender Titel nach Übersetzung der Verfasserin/des Verfassers
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License: 
In Copyright
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