A “life cycle thinking” approach to assess differences in the energy use of SiC vs. Si power semiconductors

Abstract

Wide Band Gap (WBG) semiconductors have the potential to provide significant improvements in energy efficiency over conventional Silicon (Si) semiconductors. While the potential for energy efficiency gains is widely researched, the relation to the energy use during manufacturing processes remains insufficiently studied. This question is especially relevant for Silicon carbide (SiC) semiconductors, as there are some key differences in their production processes compared to Si. Through expert interviews and literature research, this paper aims to identify the main differences of the SiC semiconductors production chain. These differences are set off against a typical end-use scenario, to better understand the proportionality of energy inputs vs. efficiency gains. Furthermore, the most important variables in this assessment are highlighted.