Yang, T., Perazzi, M., Leitgeb, M., Zellner, C., Pfusterschmied, G., & Schmid, U. (2024, September). K-3. DFT calculations on the surface termination of 4H-SiC {10-10} and {11-20} during photoelectrochemical pore formation [Conference Presentation]. ICSCRM 2024: International Conference on Silicon Carbide and Related Materials, Raleigh, United States of America (the). http://hdl.handle.net/20.500.12708/208598