<div class="csl-bib-body">
<div class="csl-entry">Reiter, T., Toifl, A., Kong, S. W., Hoessinger, A., & Filipovic, L. (2024). Impact of Ion Energy and Yield in Oblique Ion Beam Etching Process for Blazed Gratings. In <i>2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)</i> (pp. 1–4). https://doi.org/10.1109/SISPAD62626.2024.10733316</div>
</div>
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/212515
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dc.description.abstract
We present a model for oblique ion beam etching (IBE) processes which are applied in the fabrication of optoelectronic devices, such as blazed gratings. Our model combines top-down Monte Carlo flux calculation and the Level-Set method to accurately capture the intricate etch profile evolution during the IBE process. We demonstrate the capability of our model by reproducing experimental etch profiles presented by Zhang et al. [1]. Furthermore, we study the impact of the ion energy and yield on the time evolution of etch profiles, highlighting their crucial roles in shaping the final device geometries.
en
dc.description.sponsorship
Christian Doppler Forschungsgesells
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dc.language.iso
en
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dc.subject
Blazed gratings
en
dc.subject
Ion beam etching
en
dc.subject
Optoelectronics
en
dc.subject
Process simulation
en
dc.title
Impact of Ion Energy and Yield in Oblique Ion Beam Etching Process for Blazed Gratings
en
dc.type
Inproceedings
en
dc.type
Konferenzbeitrag
de
dc.contributor.affiliation
Silvaco (United Kingdom), United Kingdom of Great Britain and Northern Ireland (the)
-
dc.contributor.affiliation
Santa Clara University, United States of America (the)
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dc.relation.isbn
979-8-3315-1635-2
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dc.relation.doi
10.1109/SISPAD62626.2024
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dc.description.startpage
1
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dc.description.endpage
4
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dc.relation.grantno
00000
-
dc.type.category
Full-Paper Contribution
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tuw.booktitle
2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
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tuw.peerreviewed
true
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tuw.project.title
Multi-Scale-Prozessmodellierung von Halbleiter-Bauelemente und -Sensoren
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tuw.researchTopic.id
C6
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tuw.researchTopic.name
Modeling and Simulation
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tuw.researchTopic.value
100
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tuw.publication.orgunit
E360-01 - Forschungsbereich Mikroelektronik
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tuw.publication.orgunit
E056-04 - Fachbereich TU-DX: Towards Applications of 2D Materials
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tuw.publisher.doi
10.1109/SISPAD62626.2024.10733316
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dc.description.numberOfPages
4
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tuw.author.orcid
0000-0002-5638-9129
-
tuw.author.orcid
0000-0003-1687-5058
-
tuw.event.name
2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
en
tuw.event.startdate
24-09-2024
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tuw.event.enddate
27-09-2024
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tuw.event.online
On Site
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tuw.event.type
Event for scientific audience
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tuw.event.place
San Jose, CA
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tuw.event.country
US
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tuw.event.presenter
Reiter, Tobias
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wb.sciencebranch
Elektrotechnik, Elektronik, Informationstechnik
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wb.sciencebranch.oefos
2020
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wb.sciencebranch.value
100
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item.languageiso639-1
en
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item.openairetype
conference paper
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item.grantfulltext
restricted
-
item.fulltext
no Fulltext
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item.cerifentitytype
Publications
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item.openairecristype
http://purl.org/coar/resource_type/c_5794
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crisitem.author.dept
E360-01 - Forschungsbereich Mikroelektronik
-
crisitem.author.dept
E360-01 - Forschungsbereich Mikroelektronik
-
crisitem.author.dept
Santa Clara University
-
crisitem.author.dept
E360 - Institut für Mikroelektronik
-
crisitem.author.dept
E360-01 - Forschungsbereich Mikroelektronik
-
crisitem.author.orcid
0000-0002-5638-9129
-
crisitem.author.orcid
0000-0003-1687-5058
-
crisitem.author.parentorg
E360 - Institut für Mikroelektronik
-
crisitem.author.parentorg
E360 - Institut für Mikroelektronik
-
crisitem.author.parentorg
E350 - Fakultät für Elektrotechnik und Informationstechnik
