Reiter, T., Toifl, A., Kong, S. W., Hoessinger, A., & Filipovic, L. (2024). Impact of Ion Energy and Yield in Oblique Ion Beam Etching Process for Blazed Gratings. In 2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 1–4). https://doi.org/10.1109/SISPAD62626.2024.10733316
2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
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Event date:
24-Sep-2024 - 27-Sep-2024
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Event place:
San Jose, CA, United States of America (the)
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Number of Pages:
4
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Peer reviewed:
Yes
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Keywords:
Blazed gratings; Ion beam etching; Optoelectronics; Process simulation
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Abstract:
We present a model for oblique ion beam etching (IBE) processes which are applied in the fabrication of optoelectronic devices, such as blazed gratings. Our model combines top-down Monte Carlo flux calculation and the Level-Set method to accurately capture the intricate etch profile evolution during the IBE process. We demonstrate the capability of our model by reproducing experimental etch profiles presented by Zhang et al. [1]. Furthermore, we study the impact of the ion energy and yield on the time evolution of etch profiles, highlighting their crucial roles in shaping the final device geometries.
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Project title:
Multi-Scale-Prozessmodellierung von Halbleiter-Bauelemente und -Sensoren: 00000 (Christian Doppler Forschungsgesells)
