Reconfigurable Ge transistors enabling adaptive differential amplifiers

Abstract

Exploiting the capabilities of multi-gated transistors is a promising strategy for adaptive and compensative analog circuits. Typically, reconfigurable transistors, which can be switched between n-and p-type operation at runtime, are used as universal transistors in fine grain programmable digital circuits. However, in the analog domain, by operating the transistors deliberately in intermediate states, they enable adjustments to application-specific requirements and allow for compensation of undesired deviations. Here, we propose a Ge-on-SOI transistor circuit primitive that enables an adaptable circuit design featuring n-and p-type common source (CS) and drain circuits, with electrostatically tuneable output-to-input ratio. Most notably, combined experimental and simulation studies promote verification and scalability assessment. Finally, the first experimental evidence of the electrostatic compensation of transistor/circuitpath-related device-to-device inequalities is shown in a differential amplifier featuring adaptable gain.