<div class="csl-bib-body">
<div class="csl-entry">Jørstad, N. P., Goes, W., Selberherr, S., & Sverdlov, V. (2025). Optimizing unconventional trilayer SOTs for field-free switching. <i>Solid-State Electronics</i>, <i>228</i>, Article 109135. https://doi.org/10.1016/j.sse.2025.109135</div>
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dc.identifier.issn
0038-1101
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/218201
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dc.description.abstract
The symmetry and magnitude of unconventional spin–orbit torques in ferromagnet/heavy metal/ferromagnet trilayers are investigated. Several spin-generating mechanisms are considered such as the anomalous Hall effect, anisotropic magnetoresistance, the Rashba–Edelstein effect, and the spin Hall effect. Optimal material thicknesses and magnetization configurations for maximizing out-of-plane spin torques for breaking the bilayer symmetry are presented. Furthermore, field-free switching simulations of a perpendicular SOT-MRAM utilizing the optimized trilayer torques are demonstrated, showing improved switching currents compared to another reported trilayer-based device.
en
dc.description.sponsorship
Christian Doppler Forschungsgesells
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dc.language.iso
en
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dc.publisher
PERGAMON-ELSEVIER SCIENCE LTD
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dc.relation.ispartof
Solid-State Electronics
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dc.rights.uri
http://creativecommons.org/licenses/by/4.0/
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dc.subject
Anisotropic magnetroresistance
en
dc.subject
Anomalous Hall effect
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dc.subject
Rashba–Edelstein effect
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dc.subject
SOT-MRAM
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dc.title
Optimizing unconventional trilayer SOTs for field-free switching
