Record link: 
http://hdl.handle.net/20.500.12708/219658
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Title: 
Temperature-dependent Electronic Transport in Multi-Gate Ge/Sn and SiGeSn Schottky Barrier Field Effect Transistors
en
Citation: 
Sistani, M., Fuchsberger, A., Wind, L., Knaller, N., Vogl, L., Schweizer, P., Prado Navarrete, E., Aberl, J., Brehm, M., & Weber, W. M. (2025, September 15). Temperature-dependent Electronic Transport in Multi-Gate Ge/Sn and SiGeSn Schottky Barrier Field Effect Transistors [Conference Presentation]. 2025 MRS Fall Meeting, Warsaw, Poland. http://hdl.handle.net/20.500.12708/219658
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Publication Type: 
Presentation - Conference Presentation
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Language: 
English
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Authors: 
Sistani, Masiar 
Fuchsberger, Andreas 
Wind, Lukas 
Knaller, Nicolas 
Vogl, Lilian 
Schweizer, Peter 
Prado Navarrete, Enrique 
Aberl, Johannes 
Brehm, Moritz 
Weber, Walter Michael 
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Organisational Unit: 
E362-02 - Forschungsbereich Nanoelektronische Bauelemente 
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Date (published): 
15-Sep-2025
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Event name: 
2025 MRS Fall Meeting 
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Event date: 
15-Sep-2025 - 18-Sep-2025
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Event place: 
Warsaw, Poland
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Keywords: 
Schottky Barrier; field effect transistor
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Research Areas: 
Materials Characterization: 30%
Surfaces and Interfaces: 30%
Nanoelectronics: 40%
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Science Branch: 
2020 - Elektrotechnik, Elektronik, Informationstechnik: 100%
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