Topological materials, distinguished by their unconventional electronic band structures—featuring band inversions, topological crossings, and protected surface states—hold great potential for applications in advanced electronic devices. However, a key challenge lies in the fact that these topological features often occur at energies far from the Fermi level, limiting their impact on electronic transport. In this talk, I will demonstrate how strong electronic correlations, as exemplified by the Kondo effect, can drive the formation of topological bands near the Fermi level, with drastically enhanced electronic densities of states compared to the non-interacting case. This results in giant, highly tunable topological transport signatures. Finally, I will discuss strategies for expanding the material basis for these phenomena.