<div class="csl-bib-body">
<div class="csl-entry">Raad, R., Sauer, M., Pfusterschmied, G., & Schmid, U. (2025, September 24). <i>XPS Investigation of Argon Monoatomic and Gas Cluster Ion Beam Etching of 4H SiC</i> [Conference Presentation]. American Vacuum Society International Symposium and Exhibition (AVS 71) 2025, Charlotte, United States of America (the).</div>
</div>
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/225613
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dc.description.abstract
Depth profiling is commonly used in spectroscopic analyses, but it can significantly alter the chemical stoichiometry and crystalline structure due to ion-matter interactions, such as mixing, cascade collision, amorphization, or diffusion1,2. In compound materials like SiC, preferential etching worsens the overall situation, which can yield misleading analyses. The gas cluster ion beam (GCIB) technique has emerged as a promising solution, notably known for its low-damage irradiation3. However, sputtering parameters must be carefully tuned as even with this technique, destructive effects on inorganic materials were demonstrated4. Therefore, understanding the surface modification of innovative semiconductors such as 4H SiC is crucial to minimizing sputtering artifacts and ensuring accurate device analysis.
en
dc.language.iso
en
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dc.subject
XPS Investigation
en
dc.title
XPS Investigation of Argon Monoatomic and Gas Cluster Ion Beam Etching of 4H SiC
en
dc.type
Presentation
en
dc.type
Vortrag
de
dc.type.category
Conference Presentation
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tuw.researchTopic.id
M2
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tuw.researchTopic.name
Materials Characterization
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tuw.researchTopic.value
100
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tuw.publication.orgunit
E366-02 - Forschungsbereich Mikrosystemtechnik
-
tuw.publication.orgunit
E057-05 - Fachbereich Analytical Instrumentation Center
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tuw.author.orcid
0000-0003-1720-6032
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tuw.event.name
American Vacuum Society International Symposium and Exhibition (AVS 71) 2025
en
tuw.event.startdate
21-09-2025
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tuw.event.enddate
26-09-2025
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tuw.event.online
On Site
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tuw.event.type
Event for scientific audience
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tuw.event.place
Charlotte
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tuw.event.country
US
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tuw.event.presenter
Raad, Ryan
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wb.sciencebranch
Elektrotechnik, Elektronik, Informationstechnik
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wb.sciencebranch.oefos
2020
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wb.sciencebranch.value
100
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item.openairecristype
http://purl.org/coar/resource_type/c_18cp
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item.fulltext
no Fulltext
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item.languageiso639-1
en
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item.grantfulltext
none
-
item.openairetype
conference paper not in proceedings
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item.cerifentitytype
Publications
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crisitem.author.dept
E366-02 - Forschungsbereich Mikrosystemtechnik
-
crisitem.author.dept
E057-05 - Fachbereich Analytical Instrumentation Center
-
crisitem.author.dept
E366-02 - Forschungsbereich Mikrosystemtechnik
-
crisitem.author.dept
E366 - Institut für Sensor- und Aktuatorsysteme
-
crisitem.author.orcid
0000-0003-1720-6032
-
crisitem.author.parentorg
E366 - Institut für Sensor- und Aktuatorsysteme
-
crisitem.author.parentorg
E057 - Facilities und Zentren
-
crisitem.author.parentorg
E366 - Institut für Sensor- und Aktuatorsysteme
-
crisitem.author.parentorg
E350 - Fakultät für Elektrotechnik und Informationstechnik
