Depth profiling is commonly used in spectroscopic analyses, but it can significantly alter the chemical stoichiometry and crystalline structure due to ion-matter interactions, such as mixing, cascade collision, amorphization, or diffusion1,2. In compound materials like SiC, preferential etching worsens the overall situation, which can yield misleading analyses. The gas cluster ion beam (GCIB) technique has emerged as a promising solution, notably known for its low-damage irradiation3. However, sputtering parameters must be carefully tuned as even with this technique, destructive effects on inorganic materials were demonstrated4. Therefore, understanding the surface modification of innovative semiconductors such as 4H SiC is crucial to minimizing sputtering artifacts and ensuring accurate device analysis.