<div class="csl-bib-body">
<div class="csl-entry">Mounir, A., Lime, F., Kloes, A., Provias, A., Knobloch, T., O’Brien, K. P., Grasser, T., & Iñiguez, B. (2025). A Physics-Based Compact I-V Model for Short-Channel MoS₂ FETs. In <i>2025 International Compact Modeling Conference (ICMC)</i> (pp. 1–4). IEEE. https://doi.org/10.1109/ICMC64879.2025.11102646</div>
</div>
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/226019
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dc.description.abstract
We present a physics-based compact I-V model for short-channel MoS₂ FETs, addressing critical short-channel effects such as drain-induced barrier lowering, mobility degradation, and velocity saturation. This model extends our previous long-channel framework and is validated against experimental data from fabricated devices using processing steps at Intel Foundry Technology Research Labs, showing excellent agreement down to 60 nm channel length,
en
dc.description.sponsorship
Christian Doppler Forschungsgesells
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dc.language.iso
en
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dc.subject
2D FETs
en
dc.subject
2D Materials
en
dc.subject
DC Compact Model
en
dc.subject
Lambert W function
en
dc.subject
mobility degradation
en
dc.subject
MoS2 FETs
en
dc.subject
Short Channel Effects (SCEs)
en
dc.subject
velocity saturation
en
dc.title
A Physics-Based Compact I-V Model for Short-Channel MoS₂ FETs
en
dc.type
Inproceedings
en
dc.type
Konferenzbeitrag
de
dc.contributor.affiliation
Universitat Rovira i Virgili, Spain
-
dc.contributor.affiliation
Universitat Rovira i Virgili, Spain
-
dc.contributor.affiliation
Technische Hochschule Mittelhessen, Germany
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dc.contributor.affiliation
Intel (United States), United States of America (the)
-
dc.contributor.affiliation
Universitat Rovira i Virgili, Spain
-
dc.relation.isbn
979-8-3315-3530-8
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dc.description.startpage
1
-
dc.description.endpage
4
-
dc.relation.grantno
00000000
-
dc.type.category
Full-Paper Contribution
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tuw.booktitle
2025 International Compact Modeling Conference (ICMC)
-
tuw.peerreviewed
true
-
tuw.relation.publisher
IEEE
-
tuw.project.title
CD-Labor für Einzeldefektspektroskopie in Halbleiterbauelementen
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tuw.researchTopic.id
Q4
-
tuw.researchTopic.id
C6
-
tuw.researchTopic.name
Nanoelectronics
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tuw.researchTopic.name
Modeling and Simulation
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tuw.researchTopic.value
50
-
tuw.researchTopic.value
50
-
tuw.publication.orgunit
E360-01 - Forschungsbereich Mikroelektronik
-
tuw.publication.orgunit
E056-04 - Fachbereich TU-DX: Towards Applications of 2D Materials
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tuw.publisher.doi
10.1109/ICMC64879.2025.11102646
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dc.description.numberOfPages
4
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tuw.author.orcid
0000-0002-1024-6480
-
tuw.author.orcid
0000-0002-6485-1512
-
tuw.author.orcid
0000-0001-5156-9510
-
tuw.author.orcid
0009-0008-2039-0452
-
tuw.event.name
International Compact Modeling Conference (ICMC 2025)
en
tuw.event.startdate
26-06-2025
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tuw.event.enddate
27-06-2025
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tuw.event.online
On Site
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tuw.event.type
Event for scientific audience
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tuw.event.place
San Francisco, CA
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tuw.event.country
US
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tuw.event.presenter
Mounir, Ahmed
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wb.sciencebranch
Elektrotechnik, Elektronik, Informationstechnik
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wb.sciencebranch.oefos
2020
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wb.sciencebranch.value
100
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item.openairecristype
http://purl.org/coar/resource_type/c_5794
-
item.fulltext
no Fulltext
-
item.languageiso639-1
en
-
item.grantfulltext
restricted
-
item.openairetype
conference paper
-
item.cerifentitytype
Publications
-
crisitem.author.dept
Universitat Rovira i Virgili, Spain
-
crisitem.author.dept
Universitat Rovira i Virgili, Spain
-
crisitem.author.dept
Technische Hochschule Mittelhessen, Germany
-
crisitem.author.dept
E360-01 - Forschungsbereich Mikroelektronik
-
crisitem.author.dept
E360-01 - Forschungsbereich Mikroelektronik
-
crisitem.author.dept
Intel (United States), United States of America (the)
-
crisitem.author.dept
E360 - Institut für Mikroelektronik
-
crisitem.author.dept
Universitat Rovira i Virgili, Spain
-
crisitem.author.orcid
0000-0002-1024-6480
-
crisitem.author.orcid
0000-0002-6485-1512
-
crisitem.author.orcid
0000-0001-5156-9510
-
crisitem.author.parentorg
E360 - Institut für Mikroelektronik
-
crisitem.author.parentorg
E360 - Institut für Mikroelektronik
-
crisitem.author.parentorg
E350 - Fakultät für Elektrotechnik und Informationstechnik
