Record link: 
http://hdl.handle.net/20.500.12708/226019
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Title: 
A Physics-Based Compact I-V Model for Short-Channel MoS₂ FETs
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Citation: 
Mounir, A., Lime, F., Kloes, A., Provias, A., Knobloch, T., O’Brien, K. P., Grasser, T., & Iñiguez, B. (2025). A Physics-Based Compact I-V Model for Short-Channel MoS₂ FETs. In 2025 International Compact Modeling Conference (ICMC) (pp. 1–4). IEEE. https://doi.org/10.1109/ICMC64879.2025.11102646
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Publisher DOI: 
10.1109/ICMC64879.2025.11102646
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Publication Type: 
Inproceedings - Full-Paper Contribution
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Language: 
English
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Authors: 
Mounir, Ahmed 
Lime, François 
Kloes, Alexander 
Provias, Alexandros 
Knobloch, Theresia 
O'Brien, K.P. 
Grasser, Tibor 
Iñiguez, Benjamin 
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Organisational Unit: 
E360-01 - Forschungsbereich Mikroelektronik 
E056-04 - Fachbereich TU-DX: Towards Applications of 2D Materials 
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Published in: 
2025 International Compact Modeling Conference (ICMC) 
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ISBN: 
979-8-3315-3530-8
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Date (published): 
5-Aug-2025
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Event name: 
International Compact Modeling Conference (ICMC 2025) 
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Event date: 
26-Jun-2025 - 27-Jun-2025
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Event place: 
San Francisco, CA, United States of America (the)
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Number of Pages: 
4
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Publisher: 
IEEE
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Peer reviewed: 
Yes
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Keywords: 
2D FETs; 2D Materials; DC Compact Model; Lambert W function; mobility degradation; MoS2 FETs; Short Channel Effects (SCEs); velocity saturation
en
Abstract: 
We present a physics-based compact I-V model for short-channel MoS₂ FETs, addressing critical short-channel effects such as drain-induced barrier lowering, mobility degradation, and velocity saturation. This model extends our previous long-channel framework and is validated against experimental data from fabricated devices using processing steps at Intel Foundry Technology Research Labs, showing excellent agreement down to 60 nm channel length,
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Project title: 
CD-Labor für Einzeldefektspektroskopie in Halbleiterbauelementen: 00000000 (Christian Doppler Forschungsgesells) 
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Research Areas: 
Nanoelectronics: 50%
Modeling and Simulation: 50%
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Science Branch: 
2020 - Elektrotechnik, Elektronik, Informationstechnik: 100%
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Appears in Collections:
Conference Paper

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