<div class="csl-bib-body">
<div class="csl-entry">Strieder, R., Roy Chaudhuri, R., Butej, B., Stabentheiner, M., Ruch, B., Koller, C., Ostermeier, C., Pogany, D., & Waltl, M. (2026). Impact of AlGaN back barrier on drain current recovery in p-GaN based GaN HEMTs subjected to semi-ON stress. In <i>WOCSDICE EXMATEC 2026 : Gdansk : Poland</i> (pp. 163–164).</div>
</div>
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/229754
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dc.language.iso
en
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dc.subject
AlGaN
en
dc.subject
p-GaN based GaN HEMTs
en
dc.subject
back barrier layer
en
dc.title
Impact of AlGaN back barrier on drain current recovery in p-GaN based GaN HEMTs subjected to semi-ON stress
49th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE) and 20th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (EXMATEC)
