Record link: 
http://hdl.handle.net/20.500.12708/229754
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Title: 
Impact of AlGaN back barrier on drain current recovery in p-GaN based GaN HEMTs subjected to semi-ON stress
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Citation: 
Strieder, R., Roy Chaudhuri, R., Butej, B., Stabentheiner, M., Ruch, B., Koller, C., Ostermeier, C., Pogany, D., & Waltl, M. (2026). Impact of AlGaN back barrier on drain current recovery in p-GaN based GaN HEMTs subjected to semi-ON stress. In WOCSDICE EXMATEC 2026 : Gdansk : Poland (pp. 163–164).
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Publication Type: 
Inproceedings - Abstract Book Contribution
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Language: 
English
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Authors: 
Strieder, Roland 
Roy Chaudhuri, Rajarshi 
Butej, Boris 
Stabentheiner, M. 
Ruch, Bernhard 
Koller, Christian 
Ostermeier, Clemens 
Pogany, Dionyz 
Waltl, Michael 
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Organisational Unit: 
E362-02 - Forschungsbereich Nanoelektronische Bauelemente 
E360-01 - Forschungsbereich Mikroelektronik 
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Published in: 
WOCSDICE EXMATEC 2026 : Gdansk : Poland 
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Date (published): 
27-May-2026
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Event name: 
49th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE) and 20th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (EXMATEC) 
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Event date: 
24-May-2026 - 28-May-2026
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Event place: 
Gdansk, Poland
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Number of Pages: 
2
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Keywords: 
AlGaN; p-GaN based GaN HEMTs; back barrier layer
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Research Areas: 
Materials Characterization: 30%
Nanoelectronics: 70%
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Science Branch: 
2020 - Elektrotechnik, Elektronik, Informationstechnik: 100%
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Appears in Collections:
Conference Paper

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