Record link: 
https://doi.org/10.34726/hss.2026.143100
http://hdl.handle.net/20.500.12708/230978
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Title: 
Dynamic device characterization of GaN-on-Insulator HEMTs
en
Citation: 
Ivankovic, M. (2026). Dynamic device characterization of GaN-on-Insulator HEMTs [Diploma Thesis, Technische Universität Wien]. reposiTUm. https://doi.org/10.34726/hss.2026.143100
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reposiTUm DOI: 
10.34726/hss.2026.143100
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CatalogPlus: 
AC18026970
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Publication Type: 
Thesis - Diplomarbeit
en
Language: 
English
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Authors: 
Ivankovic, Marina 
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Advisor: 
Weber, Walter Michael 
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Organisational Unit: 
E362 - Institut für Festkörperelektronik 
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Date (published): 
2026
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Number of Pages: 
71
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Keywords: 
GaN Charakterisierung
de
 
GaN characterization
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License: 
In Copyright
de
Appears in Collections:
Thesis

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