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Record link: 
http://hdl.handle.net/20.500.12708/89996
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Title: 
Gate oxides for AlGaN/GaN MOSHEMTs
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Citation: 
Alexewicz, A. (2013). Gate oxides for AlGaN/GaN MOSHEMTs. WOCSEMMAD, Napa Valley, USA, Non-EU. http://hdl.handle.net/20.500.12708/89996
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Publication Type: 
Presentation - Conference presentation
en
Authors: 
Alexewicz, Alexander 
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Organisational Unit: 
E362 - Institut für Festkörperelektronik 
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Date (published): 
2013
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Event name: 
WOCSEMMAD 
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Event date: 
19-Feb-2012 - 22-Feb-2012
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Event place: 
Napa Valley, USA, Non-EU
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Science Branch: 
Elektrotechnik, Elektronik
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Appears in Collections:
Presentation

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