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Record link: 
http://hdl.handle.net/20.500.12708/90919
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Title: 
Incorporation of Boron in GaAs nanowires grown by self-catalysed molecular beam epitaxy
en
Citation: 
Lancaster, S., Groiss, H., MacFarland, D., Zederbauer, T., Andrews, A. M., Schrenk, W., Strasser, G., & Detz, H. (2017). Incorporation of Boron in GaAs nanowires grown by self-catalysed molecular beam epitaxy. Nanowire Week 2017, Lund, Sweden. http://hdl.handle.net/20.500.12708/90919
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Publication Type: 
Presentation - Conference Presentation
en
Language: 
English
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Authors: 
Lancaster, Suzanne 
Groiss, H 
MacFarland, Donald 
Zederbauer, Tobias 
Andrews, Aaron Maxwell 
Schrenk, Werner 
Strasser, Gottfried 
Detz, Hermann 
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Organisational Unit: 
E362 - Institut für Festkörperelektronik 
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Date (published): 
2017
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Event name: 
Nanowire Week 2017 
en
Event date: 
29-May-2017 - 2-Jun-2017
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Event place: 
Lund, Sweden
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Science Branch: 
Elektrotechnik, Elektronik, Informationstechnik
Physik, Astronomie
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Appears in Collections:
Presentation

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