Proceedings of the IEEE International Reliability Physics Symposium (IRPS)

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Proceedings of the IEEE International Reliability Physics Symposium (IRPS)
 

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PreviewAuthors / EditorsTitleTypeIssue Date
1Grasser, Tibor ; Kaczer, Ben ; Gös, Wolfgang ; Aichinger, T. ; Hehenberger, Philipp Paul ; Nelhiebel, M. A Two-Stage Model for Negative Bias Temperature InstabilityKonferenzbeitrag Inproceedings2009
2Kaczer, Ben ; Rzepa, Gerhard ; Franco, J. ; Weckx, P. ; Chasin, A ; Putcha, Vamsi ; Bury, E. ; Simicic, Marko ; Roussel, Ph. J. ; Hellings, Geert ; Veloso, A. ; Matagne, Ph ; Grasser, Tibor ; Linten, D Benchmarking Time-Dependent Variability of Junctionless Nanowire FETsKonferenzbeitrag Inproceedings2017
3Chasin, A ; Franco, J. ; Kaczer, Ben ; Putcha, Vamsi ; Weckx, P. ; Ritzenthaler, Romain ; Mertens, H. ; Horiguchi, N. ; Linten, D ; Rzepa, Gerhard BTI Reliability and Time-Dependent Variability of Stacked Gate-All-Around Si Nanowire TransistorsKonferenzbeitrag Inproceedings2017
4Grasser, Tibor ; Stampfer, Bernhard ; Waltl, Michael ; Rzepa, Gerhard ; Rupp, Karl ; Schanovsky, Franz ; Pobegen, G. ; Puschkarsky, Katja ; Reisinger, H. ; O´Sullivan, B. J. ; Kaczer, Ben Characterization and Physical Modeling of the Temporal Evolution of Near-Interfacial States Resulting from NBTI/PBTI Stress in nMOS/pMOS TransistorsKonferenzbeitrag Inproceedings 2018
5Tyaginov, S. E. ; Gös, Wolfgang ; Grasser, Tibor ; Sverdlov, Viktor ; Schwaha, Philipp ; Heinzl, Rene ; Stimpfl, Franz Description of Si-O Bond Breakage Using Pair-Wise Interatomic Potentials Under Consideration of the Whole CrystalKonferenzbeitrag Inproceedings2009
6Hehenberger, Philipp Paul ; Aichinger, T. ; Grasser, Tibor ; Gös, Wolfgang ; Triebl, Oliver ; Kaczer, Ben ; Nelhiebel, M. Do NBTI-Induced Interface States Show Fast Recovery? A Study Using a Corrected On-The-Fly Charge-Pumping Measurement TechniqueKonferenzbeitrag Inproceedings2009
7Rzepa, Gerhard ; Franco, J. ; Subirats, A ; Jech, Markus ; Chasin, A ; Grill, Alexander ; Waltl, Michael ; Knobloch, Theresia ; Stampfer, Bernhard ; Chiarella, T. ; Horiguchi, N. ; Ragnarsson, L. A. ; Linten, D ; Kaczer, Ben ; Grasser, Tibor Efficient Physical Defect Model Applied to PBTI in High-κ StacksKonferenzbeitrag Inproceedings2017
8Grasser, Tibor ; Waltl, Michael ; Puschkarsky, Katja ; Stampfer, Bernhard ; Rzepa, Gerhard ; Pobegen, G. ; Reisinger, H. ; Arimura, H ; Kaczer, Ben Implications of Gate-Sided Hydrogen Release for Post-Stress Degradation Build-Up after BTI StressKonferenzbeitrag Inproceedings2017
9Kaczer, Ben ; Grasser, Tibor ; Martin-Martinez, J. ; Simoen, E. ; Aoulaiche, M. ; Roussel, Ph. J. ; Groeseneken, G. NBTI from the Perspective of Defect States with Widely Distributed Time ScalesKonferenzbeitrag Inproceedings2009
10Aichinger, T. ; Nelhiebel, M. ; Grasser, Tibor On the Temperature Dependence of NBTI RecoveryKonferenzbeitrag Inproceedings2009
11Aichinger, T. ; Nelhiebel, M. ; Grasser, Tibor Unambiguous Identification of the NBTI Recovery Mechanism using Ultra-Fast Temperature ChangesKonferenzbeitrag Inproceedings2009
12Puschkarsky, Katja ; Grasser, Tibor ; Aichinger, T. ; Gustin, W. ; Reisinger, H. Understanding and Modeling Transient Threshold Voltage Instabilities in SiC MOSFETsKonferenzbeitrag Inproceedings 2018