|
| | Preview | Author(s) | Title | Type | Issue Date |
| 1 | | Grasser, Tibor ; Kaczer, Ben ; Gös, Wolfgang ; Aichinger, T. ; Hehenberger, Philipp Paul ; Nelhiebel, M. | A Two-Stage Model for Negative Bias Temperature Instability | Konferenzbeitrag Inproceedings | 2009 |
| 2 | | Kaczer, Ben ; Rzepa, Gerhard ; Franco, J. ; Weckx, P. ; Chasin, A ; Putcha, Vamsi ; Bury, E. ; Simicic, Marko ; Roussel, Ph. J. ; Hellings, Geert ; Veloso, A. ; Matagne, Ph ; Grasser, Tibor ; Linten, D | Benchmarking Time-Dependent Variability of Junctionless Nanowire FETs | Konferenzbeitrag Inproceedings | 2017 |
| 3 | | Chasin, A ; Franco, J. ; Kaczer, Ben ; Putcha, Vamsi ; Weckx, P. ; Ritzenthaler, Romain ; Mertens, H. ; Horiguchi, N. ; Linten, D ; Rzepa, Gerhard | BTI Reliability and Time-Dependent Variability of Stacked Gate-All-Around Si Nanowire Transistors | Konferenzbeitrag Inproceedings | 2017 |
| 4 | | Grasser, Tibor ; Stampfer, Bernhard ; Waltl, Michael ; Rzepa, Gerhard ; Rupp, Karl ; Schanovsky, Franz ; Pobegen, G. ; Puschkarsky, Katja ; Reisinger, H. ; O´Sullivan, B. J. ; Kaczer, Ben | Characterization and Physical Modeling of the Temporal Evolution of Near-Interfacial States Resulting from NBTI/PBTI Stress in nMOS/pMOS Transistors | Konferenzbeitrag Inproceedings  | 2018 |
| 5 | | Tyaginov, S. E. ; Gös, Wolfgang ; Grasser, Tibor ; Sverdlov, Viktor ; Schwaha, Philipp ; Heinzl, Rene ; Stimpfl, Franz | Description of Si-O Bond Breakage Using Pair-Wise Interatomic Potentials Under Consideration of the Whole Crystal | Konferenzbeitrag Inproceedings | 2009 |
| 6 | | Hehenberger, Philipp Paul ; Aichinger, T. ; Grasser, Tibor ; Gös, Wolfgang ; Triebl, Oliver ; Kaczer, Ben ; Nelhiebel, M. | Do NBTI-Induced Interface States Show Fast Recovery? A Study Using a Corrected On-The-Fly Charge-Pumping Measurement Technique | Konferenzbeitrag Inproceedings | 2009 |
| 7 | | Rzepa, Gerhard ; Franco, J. ; Subirats, A ; Jech, Markus ; Chasin, A ; Grill, Alexander ; Waltl, Michael ; Knobloch, Theresia ; Stampfer, Bernhard ; Chiarella, T. ; Horiguchi, N. ; Ragnarsson, L. A. ; Linten, D ; Kaczer, Ben ; Grasser, Tibor | Efficient Physical Defect Model Applied to PBTI in High-κ Stacks | Konferenzbeitrag Inproceedings | 2017 |
| 8 | | Grasser, Tibor ; Waltl, Michael ; Puschkarsky, Katja ; Stampfer, Bernhard ; Rzepa, Gerhard ; Pobegen, G. ; Reisinger, H. ; Arimura, H ; Kaczer, Ben | Implications of Gate-Sided Hydrogen Release for Post-Stress Degradation Build-Up after BTI Stress | Konferenzbeitrag Inproceedings | 2017 |
| 9 | | Kaczer, Ben ; Grasser, Tibor ; Martin-Martinez, J. ; Simoen, E. ; Aoulaiche, M. ; Roussel, Ph. J. ; Groeseneken, G. | NBTI from the Perspective of Defect States with Widely Distributed Time Scales | Konferenzbeitrag Inproceedings | 2009 |
| 10 | | Aichinger, T. ; Nelhiebel, M. ; Grasser, Tibor | On the Temperature Dependence of NBTI Recovery | Konferenzbeitrag Inproceedings | 2009 |
| 11 | | Aichinger, T. ; Nelhiebel, M. ; Grasser, Tibor | Unambiguous Identification of the NBTI Recovery Mechanism using Ultra-Fast Temperature Changes | Konferenzbeitrag Inproceedings | 2009 |
| 12 | | Puschkarsky, Katja ; Grasser, Tibor ; Aichinger, T. ; Gustin, W. ; Reisinger, H. | Understanding and Modeling Transient Threshold Voltage Instabilities in SiC MOSFETs | Konferenzbeitrag Inproceedings | 2018 |
