2011 International Electron Devices Meeting
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2011 International Electron Devices Meeting
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| Preview | Authors / Editors | Title | Type | Issue Date | |
|---|---|---|---|---|---|
| 1 | Grasser, T. ; Wagner, P.-J. ; Reisinger, H. ; Aichinger, Th. ; Pobegen, G. ; Nelhiebel, M. ; Kaczer, B. | Analytic modeling of the bias temperature instability using capture/emission time maps | Konferenzbeitrag Inproceedings | 2011 | |
| 2 | Rupp, Karl ; Grasser, Tibor ; Jüngel, Ansgar | On the feasibility of spherical harmonics expansions of the Boltzmann transport equation for three-dimensional device geometries | Konferenzbeitrag Inproceedings | 2011 | |
| 3 | Franco, J. ; Kaczer, B. ; Eneman, G. ; Roussel, Ph.J. ; Grasser, T. ; Mitard, J. ; Ragnarsson, L.-A. ; Cho, M. ; Witters, L. ; Chiarella, T. ; Togo, M. ; Wang, W.-E ; Hikavyy, A. ; Loo, R. ; Horiguchi, N. ; Groeseneken, G. | Superior NBTI reliability of SiGe channel pMOSFETs: Replacement gate, FinFETs, and impact of Body Bias | Konferenzbeitrag Inproceedings | 2011 | |
| 4 | Pobegen, Gregor ; Aichinger, Thomas ; Nelhiebel, Michael ; Grasser, Tibor | Understanding temperature acceleration for NBTI | Konferenzbeitrag Inproceedings | 2011 |