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| | Vorschau | Autor_in(nen) | Titel | Dokumenttyp | Erscheinungsdatum |
| 1 | | Wang, L. ; Brown, A. R. ; Nedjalkov, M. ; Alexander, C. ; Cheng, B. ; Millar, C. ; Asenov, A. | 3D electro-thermal simulations of bulk FinFETs with statistical variations | Konferenzbeitrag Inproceedings | 2015 |
| 2 | | Wimmer, Y. ; Goes, W. ; El-Sayed, A.-M. ; Shluger, A.L. ; Grasser, T. | A density-functional study of defect volatility in amorphous silicon dioxide | Konferenzbeitrag Inproceedings | 2015 |
| 3 | | Baumgartner, O. ; Filipovic, La. ; Kosina, H. ; Karner, M. ; Stanojevic, Z. ; Cheng-Karner, H.W. | Efficient modeling of source/drain tunneling in ultra-scaled transistors | Konferenzbeitrag Inproceedings | 2015 |
| 4 | | Demel, H. ; Stanojevic, Z. ; Karner, M. ; Rzepa, G. ; Grasser, T. | Expanding TCAD simulations from grid to cloud | Konferenzbeitrag Inproceedings | 2015 |
| 5 | | Papaleo, S. ; Zisser, W. H. ; Ceric, H. | Factors that influence delamination at the bottom of open TSVs | Konferenzbeitrag Inproceedings | 2015 |
| 6 | | Karner, M ; Stanojevic, Zlatan ; Kernstock, Christian ; Baumgartner, Oskar ; Cheng-Karner, Hui Wen | Hierarchical TCAD device simulation of FinFETs | Konferenzbeitrag Inproceedings | 2015 |
| 7 | | Ceric, H. ; Rovitto, M. | Impact of microstructure and current crowding on electromigration: A TCAD study | Konferenzbeitrag Inproceedings | 2015 |
| 8 | | Ellinghaus, P. ; Nedjalkov, M. ; Selberherr, S. | Improved drive-current into nanoscaled channels using electrostatic lenses | Konferenzbeitrag Inproceedings | 2015 |
| 9 | | Windbacher, Thomas ; Makarov, Alexander ; Sverdlov, Viktor ; Selberherr, Siegfried | Improving the performance of a non-volatile magnetic flip flop by exploiting the spin Hall effect | Konferenzbeitrag Inproceedings | 2015 |
| 10 | | Ghosh, Joydeep ; Osintsev, Dmitry ; Sverdlov, Viktor ; Selberherr, Siegfried | Injection direction sensitive spin lifetime model in a strained thin silicon film | Konferenzbeitrag Inproceedings | 2015 |
| 11 | | Kernstock, C. ; Stanojevic, Z. ; Baumgartner, O. ; Karner, M. | Layout-based TCAD device model generation | Konferenzbeitrag Inproceedings | 2015 |
| 12 | | Rzepa, G. ; Waltl, M. ; Goes, W. ; Kaczer, B. ; Grasser, T. | Microscopic oxide defects causing BTI, RTN, and SILC on high-k FinFETs | Konferenzbeitrag Inproceedings | 2015 |
| 13 | | Sharma, Prateek ; Jech, Markus ; Tyaginov, Stanislav ; Rudolf, Florian ; Rupp, Karl ; Enichlmair, Hubert ; Park, Jong-Mun ; Grasser, Tibor | Modeling of hot-carrier degradation in LDMOS devices using a drift-diffusion based approach | Konferenzbeitrag Inproceedings | 2015 |
| 14 | | Nazemi, Sanaz ; Soleimani, Ebrahim Asl ; Pourfath, Mahdi ; Kosina, Hans | The Role of Surface Termination Geometry on the Ground-State and Optical Properties of Silicon Nano-Crystals: A Density Functional Theory Study | Konferenzbeitrag Inproceedings | 2015 |
