2016 IEEE International Reliability Physics Symposium (IRPS)

Book title Buchtitel

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	Authors / Editors	Title	Type	Issue Date
1	Papaleo, S. ; Ceric, H.	A finite element method study of delamination at the interface of the TSV interconnects	Konferenzbeitrag Inproceedings	2016
2	Giering, K.-U. ; Rott, G. ; Rzepa, G. ; Reisinger, H. ; Puppala, A.K. ; Reich, T. ; Gustin, W. ; Grasser, T. ; Jancke, R.	Analog-circuit NBTI degradation and time-dependent NBTI variability: An efficient physics-based compact model	Konferenzbeitrag Inproceedings	2016
3	Waltl, M. ; Grill, A. ; Rzepa, G. ; Goes, W. ; Franco, J. ; Kaczer, B. ; Mitard, J. ; Grasser, T.	Nanoscale evidence for the superior reliability of SiGe high-k pMOSFETs	Konferenzbeitrag Inproceedings	2016
4	Illarionov, Yu. Yu. ; Waltl, M. ; Furchi, M. M. ; Mueller, T. ; Grasser, T.	Reliability of single-layer MoS<inf>2</inf> field-effect transistors with SiO<inf>2</inf> and hBN gate insulators	Konferenzbeitrag Inproceedings	2016
5	Grasser, T. ; Waltl, M. ; Rzepa, G. ; Goes, W. ; Wimmer, Y. ; El-Sayed, A.-M. ; Shluger, A. L. ; Reisinger, H. ; Kaczer, B.	The “permanent” component of NBTI revisited: Saturation, degradation-reversal, and annealing	Konferenzbeitrag Inproceedings	2016