2016 IEEE International Electron Devices Meeting (IEDM)
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2016 IEEE International Electron Devices Meeting (IEDM)
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| Preview | Authors / Editors | Title | Type | Issue Date | |
|---|---|---|---|---|---|
| 1 | Rescher, Gerald ; Pobegen, Gregor ; Aichinger, Thomas ; Grasser, Tibor | On the subthreshold drain current sweep hysteresis of 4H-SiC nMOSFETs | Konferenzbeitrag Inproceedings | 2016 | |
| 2 | Karner, M ; Baumgartner, Oskar ; Stanojevic, Zlatan ; Schanovsky, Franz ; Strof, G ; Kernstock, Christian ; Karner, H.W. ; Rzepa, Gerhard ; Grasser, Tibor | Vertically stacked nanowire MOSFETs for sub-10nm nodes: Advanced topography, device, variability, and reliability simulations | Konferenzbeitrag Inproceedings  | 2016 |