2019 IEEE International Electron Devices Meeting (IEDM)
Book title Buchtitel
2019 IEEE International Electron Devices Meeting (IEDM)
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| Preview | Authors / Editors | Title | Type | Issue Date | |
|---|---|---|---|---|---|
| 1 | Jech, M. ; Tyaginov, S. ; Kaczer, B. ; Franco, J. ; Jabs, D. ; Jungemann, C. ; Waltl, M. ; Grasser, T. | First–Principles Parameter–Free Modeling of n– and p–FET Hot–Carrier Degradation | Konferenzbeitrag Inproceedings  | 2019 | |
| 2 | Schleich, C. ; Berens, J. ; Rzepa, G. ; Pobegen, G. ; Rescher, G. ; Tyaginov, S. ; Grasser, T. ; Waltl, M. | Physical Modeling of Bias Temperature Instabilities in SiC MOSFETs | Konferenzbeitrag Inproceedings | 2019 | |
| 3 | Tyaginov, S. E. ; El-Sayed, A.-M. ; Makarov, Alexander ; Chasin, A ; Arimura, H ; Vandemaele, Michiel ; Jech, Markus ; Capogreco, Elena ; Witters, L. ; Grill, Alexander ; De Keersgieter, An ; Eneman, G. ; Linten, Dimitri ; Kaczer, Ben | Understanding and Physical Modeling Superior Hot-Carrier Reliability of Ge pNWFETs | Konferenzbeitrag Inproceedings | 2019 |