2019 IEEE International Integrated Reliability Workshop (IIRW)

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2019 IEEE International Integrated Reliability Workshop (IIRW)
 

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PreviewAuthor(s)TitleTypeIssue Date
1Waltl, Michael Characterization and Modeling of Single Charge Trapping in MOS TransistorsKonferenzbeitrag Inproceedings 2019
2Scharlotta, Jean-Yean ; Bersuker, Gennadi ; Tyaginov, S. E. ; Young, Chadwing ; Haase, Gaddi ; Rzepa, Gerhard ; Waltl, Michael ; Chohan, Talha ; Iyer, Subramanian ; Kotov, Alexander ; Zambelli, Cristian ; Guarin, Fernando ; Puglisi, Francesco Maria ; Ostermaier, C IIRW 2019 Discussion Group II: Reliability for Aerospace ApplicationsKonferenzbeitrag Inproceedings2019
3Waldhoer, D. ; Wimmer, Y. ; El-Sayed, A. M. ; Goes, W. ; Waltl, M. ; Grasser, T. Minimum Energy Paths for Non-Adiabatic Charge Transitions in Oxide DefectsKonferenzbeitrag Inproceedings 2019
4Makarov, Alexander ; Roussel, Philippe ; Bury, Erik ; Vandemaele, Michiel ; Spessot, Alessio ; Linten, Dimitri ; Kaczer, Ben ; Tyaginov, Stanislav On Correlation between Hot-Carrier Stress Induced Device Parameter Degradation and Time-Zero VariabilityKonferenzbeitrag Inproceedings 2019
5Stampfer, B. ; Simicic, M. ; Weckx, P. ; Abbasi, A. ; Kaczer, B. ; Grasser, T. ; Waltl, M. Statistical Characterization of BTI and RTN using Integrated pMOS ArraysKonferenzbeitrag Inproceedings 2019