2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

Event name
2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
 
Event type
Event for scientific audience
 
Start date
09-09-2015
End date
11-09-2015
 
Location
Washington, DC
Country
United States
 
Event format Veranstaltungsformat
On Site

Publications Publikationen

Results 1-14 of 14 (Search time: 0.006 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Wang, L. ; Brown, A. R. ; Nedjalkov, M. ; Alexander, C. ; Cheng, B. ; Millar, C. ; Asenov, A. 3D electro-thermal simulations of bulk FinFETs with statistical variationsKonferenzbeitrag Inproceedings2015
2Wimmer, Y. ; Goes, W. ; El-Sayed, A.-M. ; Shluger, A.L. ; Grasser, T. A density-functional study of defect volatility in amorphous silicon dioxideKonferenzbeitrag Inproceedings2015
3Baumgartner, O. ; Filipovic, La. ; Kosina, H. ; Karner, M. ; Stanojevic, Z. ; Cheng-Karner, H.W. Efficient modeling of source/drain tunneling in ultra-scaled transistorsKonferenzbeitrag Inproceedings2015
4Demel, H. ; Stanojevic, Z. ; Karner, M. ; Rzepa, G. ; Grasser, T. Expanding TCAD simulations from grid to cloudKonferenzbeitrag Inproceedings2015
5Papaleo, S. ; Zisser, W. H. ; Ceric, H. Factors that influence delamination at the bottom of open TSVsKonferenzbeitrag Inproceedings2015
6Karner, M ; Stanojevic, Zlatan ; Kernstock, Christian ; Baumgartner, Oskar ; Cheng-Karner, Hui Wen Hierarchical TCAD device simulation of FinFETsKonferenzbeitrag Inproceedings2015
7Ceric, H. ; Rovitto, M. Impact of microstructure and current crowding on electromigration: A TCAD studyKonferenzbeitrag Inproceedings2015
8Ellinghaus, P. ; Nedjalkov, M. ; Selberherr, S. Improved drive-current into nanoscaled channels using electrostatic lensesKonferenzbeitrag Inproceedings2015
9Windbacher, Thomas ; Makarov, Alexander ; Sverdlov, Viktor ; Selberherr, Siegfried Improving the performance of a non-volatile magnetic flip flop by exploiting the spin Hall effectKonferenzbeitrag Inproceedings2015
10Ghosh, Joydeep ; Osintsev, Dmitry ; Sverdlov, Viktor ; Selberherr, Siegfried Injection direction sensitive spin lifetime model in a strained thin silicon filmKonferenzbeitrag Inproceedings2015
11Kernstock, C. ; Stanojevic, Z. ; Baumgartner, O. ; Karner, M. Layout-based TCAD device model generationKonferenzbeitrag Inproceedings2015
12Rzepa, G. ; Waltl, M. ; Goes, W. ; Kaczer, B. ; Grasser, T. Microscopic oxide defects causing BTI, RTN, and SILC on high-k FinFETsKonferenzbeitrag Inproceedings2015
13Sharma, Prateek ; Jech, Markus ; Tyaginov, Stanislav ; Rudolf, Florian ; Rupp, Karl ; Enichlmair, Hubert ; Park, Jong-Mun ; Grasser, Tibor Modeling of hot-carrier degradation in LDMOS devices using a drift-diffusion based approachKonferenzbeitrag Inproceedings2015
14Nazemi, Sanaz ; Soleimani, Ebrahim Asl ; Pourfath, Mahdi ; Kosina, Hans The Role of Surface Termination Geometry on the Ground-State and Optical Properties of Silicon Nano-Crystals: A Density Functional Theory StudyKonferenzbeitrag Inproceedings2015