2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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Description

Event name
2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
 
Event type
Event for scientific audience
 
Start date
09-09-2015
End date
11-09-2015
 
Location
Washington, DC
Country
United States
 
Event format Veranstaltungsformat
On Site

Publications Publikationen

Results 1-14 of 14 (Search time: 0.006 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Wang, L. ; Brown, A. R. ; Nedjalkov, M. ; Alexander, C. ; Cheng, B. ; Millar, C. ; Asenov, A. 3D electro-thermal simulations of bulk FinFETs with statistical variationsKonferenzbeitrag Inproceedings2015
2Wimmer, Y. ; Goes, W. ; El-Sayed, A.-M. ; Shluger, A.L. ; Grasser, T. A density-functional study of defect volatility in amorphous silicon dioxideKonferenzbeitrag Inproceedings2015
3Baumgartner, O. ; Filipovic, La. ; Kosina, H. ; Karner, M. ; Stanojevic, Z. ; Cheng-Karner, H.W. Efficient modeling of source/drain tunneling in ultra-scaled transistorsKonferenzbeitrag Inproceedings2015
4Demel, H. ; Stanojevic, Z. ; Karner, M. ; Rzepa, G. ; Grasser, T. Expanding TCAD simulations from grid to cloudKonferenzbeitrag Inproceedings2015
5Papaleo, S. ; Zisser, W. H. ; Ceric, H. Factors that influence delamination at the bottom of open TSVsKonferenzbeitrag Inproceedings2015
6Karner, M ; Stanojevic, Zlatan ; Kernstock, Christian ; Baumgartner, Oskar ; Cheng-Karner, Hui Wen Hierarchical TCAD device simulation of FinFETsKonferenzbeitrag Inproceedings2015
7Ceric, H. ; Rovitto, M. Impact of microstructure and current crowding on electromigration: A TCAD studyKonferenzbeitrag Inproceedings2015
8Ellinghaus, P. ; Nedjalkov, M. ; Selberherr, S. Improved drive-current into nanoscaled channels using electrostatic lensesKonferenzbeitrag Inproceedings2015
9Windbacher, Thomas ; Makarov, Alexander ; Sverdlov, Viktor ; Selberherr, Siegfried Improving the performance of a non-volatile magnetic flip flop by exploiting the spin Hall effectKonferenzbeitrag Inproceedings2015
10Ghosh, Joydeep ; Osintsev, Dmitry ; Sverdlov, Viktor ; Selberherr, Siegfried Injection direction sensitive spin lifetime model in a strained thin silicon filmKonferenzbeitrag Inproceedings2015
11Kernstock, C. ; Stanojevic, Z. ; Baumgartner, O. ; Karner, M. Layout-based TCAD device model generationKonferenzbeitrag Inproceedings2015
12Rzepa, G. ; Waltl, M. ; Goes, W. ; Kaczer, B. ; Grasser, T. Microscopic oxide defects causing BTI, RTN, and SILC on high-k FinFETsKonferenzbeitrag Inproceedings2015
13Sharma, Prateek ; Jech, Markus ; Tyaginov, Stanislav ; Rudolf, Florian ; Rupp, Karl ; Enichlmair, Hubert ; Park, Jong-Mun ; Grasser, Tibor Modeling of hot-carrier degradation in LDMOS devices using a drift-diffusion based approachKonferenzbeitrag Inproceedings2015
14Nazemi, Sanaz ; Soleimani, Ebrahim Asl ; Pourfath, Mahdi ; Kosina, Hans The Role of Surface Termination Geometry on the Ground-State and Optical Properties of Silicon Nano-Crystals: A Density Functional Theory StudyKonferenzbeitrag Inproceedings2015