IEEE Transactions on Device and Materials Reliability

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Journal description

Title Titel
IEEE Transactions on Device and Materials Reliability
 
e-ISSN
1558-2574
 
ISSN
1530-4388
 
Publisher Herausgeber
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Publisher's Address Herausgeber Adresse
445 HOES LANE, PISCATAWAY, USA, NJ, 08855-4141
 
Listed in SCI Aufgelistet im SCI
 
Peer reviewed Begutachtet
 
 

Publications Publikationen

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Author:  Kaczer, Ben

Results 1-5 of 5 (Search time: 0.003 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Grasser, Tibor ; Wagner, Paul-JÜrgen ; Hehenberger, Philipp ; Goes, Wolfgang ; Kaczer, Ben A Rigorous Study of Measurement Techniques for Negative Bias Temperature InstabilityArtikel Article2008
2Grasser, Tibor ; Gös, Wolfgang ; Kaczer, Ben Dispersive Transport and Negative Bias Temperature Instability: Boundary Conditions, Initial Conditions, and Transport ModelsArtikel Article Mar-2008
3Stampfer, Bernhard ; Simicic, Marko ; Weckx, Pieter ; Abbasi, Arash ; Kaczer, Ben ; Grasser, Tibor ; Waltl, Michael Extraction of Statistical Gate Oxide Parameters From Large MOSFET ArraysArtikel Article 2020
4Wu, Zhicheng ; Franco, Jacopo ; Vandooren, Anne ; Kaczer, Ben ; Roussel, Philippe ; Rzepa, Gerhard ; Grasser, Tibor ; Linten, Dimitri ; Groeseneken, Guido Improved PBTI Reliability in Junction-Less FET Fabricated at Low Thermal Budget for 3-D Sequential IntegrationArtikel Article Jun-2019
5Franco, Jacopo ; Kaczer, Ben ; Mitard, Jerome ; Toledano-Luque, Maria ; Roussel, Philippe J. ; Witters, Liesbeth ; Grasser, Tibor ; Groeseneken, Guido NBTI Reliability of SiGe and Ge Channel pMOSFETs With SiO2/HfO2 Dielectric StackArtikel Article2013