IEEE Transactions on Electron Devices

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Journal description

Title Titel
IEEE Transactions on Electron Devices
 
e-ISSN
1557-9646
 
ISSN
0018-9383
 
Publisher Herausgeber
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Publisher's Address Herausgeber Adresse
445 HOES LANE, PISCATAWAY, USA, NJ, 08855-4141
 
Listed in SCI Aufgelistet im SCI
 
Peer reviewed Begutachtet
 
 

Publications Publikationen

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Date Issued:  [2000 TO 2024]
Subject:  Electronic, Optical and Magnetic Materials
Date Issued:  [2020 TO 2021]
Author:  Grasser, Tibor

Results 1-9 of 9 (Search time: 0.003 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Ruch, Bernhard ; Jech, Markus ; Pobegen, Gregor ; Grasser, Tibor Applicability of Shockley-Read-Hall Theory for Interface StatesArtikel Article 2021
2Michl, Jakob ; Grill, Alexander ; Waldhoer, Dominic ; Goes, Wolfgang ; Kaczer, Ben ; Linten, Dimitri ; Parvais, Bertrand ; Govoreanu, Bogdan ; Radu, Iuliana ; Waltl, Michael ; Grasser, Tibor Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part I: TheoryArtikel Article 2021
3Michl, Jakob ; Grill, Alexander ; Waldhoer, Dominic ; Goes, Wolfgang ; Kaczer, Ben ; Linten, Dimitri ; Parvais, Bertrand ; Govoreanu, Bogdan ; Radu, Iuliana ; Grasser, Tibor ; Waltl, Michael Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part II: ExperimentalArtikel Article 2021
4Ruch, Bernhard ; Pobegen, Gregor ; Grasser, Tibor Investigation of the Temperature Dependence of Hot-Carrier Degradation in Si MOSFETs Using Spectroscopic Charge PumpingArtikel Article 2020
5Ruch, Bernhard ; Pobegen, Gregor ; Grasser, Tibor Localizing Hot-Carrier Degradation in Silicon Trench MOSFETsArtikel Article 2021
6Jech, Markus ; Rott, Gunnar ; Reisinger, Hans ; Tyaginov, Stanislav ; Rzepa, Gerhard ; Grill, Alexander ; Jabs, Dominic ; Jungemann, Christoph ; Waltl, Michael ; Grasser, Tibor Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {VG, VD} Bias Space: Implications and PeculiaritiesArtikel Article Aug-2020
7Feil, M. W. ; Puschkarsky, K. ; Gustin, W. ; Reisinger, H. ; Grasser, T. On the Physical Meaning of Single-Value Activation Energies for BTI in Si and SiC MOSFET DevicesArtikel Article 2021
8Schleich, Christian ; Waldhoer, Dominic ; Waschneck, Katja ; Feil, Maximilian W. ; Reisinger, Hans ; Grasser, Tibor ; Waltl, Michael Physical Modeling of Charge Trapping in 4H-SiC DMOSFET TechnologiesArtikel Article 2021
9Waldhoer, Dominic ; Schleich, Christian ; Michl, Jakob ; Stampfer, Bernhard ; Tselios, Konstantinos ; Ioannidis, Eleftherios G. ; Enichlmair, Hubert ; Waltl, Michael ; Grasser, Tibor Toward Automated Defect Extraction From Bias Temperature Instability MeasurementsArtikel Article 2021