IEEE Transactions on Electron Devices

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Journal description

Title Titel
IEEE Transactions on Electron Devices
 
e-ISSN
1557-9646
 
ISSN
0018-9383
 
Publisher Herausgeber
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Publisher's Address Herausgeber Adresse
445 HOES LANE, PISCATAWAY, USA, NJ, 08855-4141
 
Listed in SCI Aufgelistet im SCI
 
Peer reviewed Begutachtet
 
 

Publications Publikationen

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Date Issued:  [2000 TO 2024]
Author:  Reisinger, Hans

Results 1-6 of 6 (Search time: 0.002 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Illarionov, Yury ; Bina, Markus ; Tyaginov, Stanislav ; Rott, Karina ; Kaczer, Ben ; Reisinger, Hans ; Grasser, Tibor Extraction of the Lateral Position of Border Traps in Nanoscale MOSFETsArtikel Article2015
2Ullmann, Bianka ; Jech, Markus ; Puschkarsky, Katja ; Rott, Gunnar Andreas ; Waltl, Michael ; Illarionov, Yury ; Reisinger, Hans ; Grasser, Tibor Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part I: ExperimentalArtikel Article 2019
3Jech, Markus ; Rott, Gunnar ; Reisinger, Hans ; Tyaginov, Stanislav ; Rzepa, Gerhard ; Grill, Alexander ; Jabs, Dominic ; Jungemann, Christoph ; Waltl, Michael ; Grasser, Tibor Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {VG, VD} Bias Space: Implications and PeculiaritiesArtikel Article Aug-2020
4Grasser, Tibor ; Rott, Karina ; Reisinger, Hans ; Waltl, Michael ; Schanovsky, Franz ; Kaczer, Ben NBTI in Nanoscale MOSFETs-The Ultimate Modeling BenchmarkArtikel Article2014
5Schleich, Christian ; Waldhoer, Dominic ; Waschneck, Katja ; Feil, Maximilian W. ; Reisinger, Hans ; Grasser, Tibor ; Waltl, Michael Physical Modeling of Charge Trapping in 4H-SiC DMOSFET TechnologiesArtikel Article 2021
6Puschkarsky, Katja ; Reisinger, Hans ; Schlünder, Christian ; Gustin, Wolfgang ; Grasser, Tibor Voltage-Dependent Activation Energy Maps for Analytic Lifetime Modeling of NBTI Without Time ExtrapolationArtikel Article 2018