IEEE Transactions on Nanotechnology

View Statistics Email Alert RSS Feed

Journal description

Title Titel
IEEE Transactions on Nanotechnology
 
e-ISSN
1941-0085
 
ISSN
1536-125X
 
Publisher Herausgeber
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Publisher's Address Herausgeber Adresse
445 HOES LANE, PISCATAWAY, USA, NJ, 08855-4141
 
Listed in SCI Aufgelistet im SCI
 
Peer reviewed Begutachtet
 
 

Publications Publikationen

Filter:
Subject:  Computer Science Applications

Results 1-9 of 9 (Search time: 0.002 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Brinciotti, Enrico ; Badino, Giorgio ; Knaipp, Martin ; Gramse, Georg ; Smoliner, Juergen ; Kienberger, Ferry Calibrated Nanoscale Dopant Profiling and Capacitance of a High-Voltage Lateral MOS Transistor at 20 GHz Using Scanning Microwave MicroscopyArtikel Article 2017
2Dhar, Siddhartha ; Ungersböck, Stephan Enzo ; Kosina, Hans ; Grasser, Tibor ; Selberherr, Siegfried Electron Mobility Model for 〈110〉 Stressed Silicon Including Strain-Dependent MassArtikel Article 15-Jan-2007
3Chen, Rui ; Gao, Weilu ; Wang, Xuan ; Aizin, Gregory R. ; Mikalopas, John ; Arikawa, Takashi ; Tanaka, Koichiro ; Eason, David B. ; Strasser, Gottfried ; Kono, Junichiro ; Bird, Jonathan P. High-Voltage Breakdown and the Gunn Effect in GaAs/AlGaAs NanoconstrictionsArtikel Article 2015
4Ahmed, S. ; Holland, K. D. ; Paydavosi, N. ; Rogers, C. M. S. ; Alam, A. U. ; Neophytou, N. ; Kienle, D. ; Vaidyanathan, M. Impact of Effective Mass on the Scaling Behavior of the fₜ and fₘₐₓ of III-V High-Electron-Mobility TransistorsArtikel Article2012
5Castro, L.C. ; John, D.L. ; Pulfrey, D.L. ; Pourfath, M. ; Gehring, A. ; Kosina, H. Method for predicting f/sub T/ for carbon nanotube FETsArtikel Article 7-Nov-2005
6Ungersboeck, E. ; Pourfath, M. ; Kosina, H. ; Gehring, A. ; Cheong, B.-H. ; Park, W.-J. ; Selberherr, S. Optimization of Single-Gate Carbon-Nanotube Field-Effect TransistorsArtikel Article 2005
7Baumgartner, Oskar ; Sverdlov, Viktor ; Windbacher, Thomas ; Selberherr, Siegfried Perspectives of Silicon for Future Spintronic Applications from the Peculiarities of the Subband Structure in Thin FilmsArtikel Article2011
8Sverdlov, Viktor ; Ungersboeck, Stephan Enzo ; Kosina, Hans Theoretical Electron Mobility Analysis in Thin-Body FETs: Dependence on Substrate Orientation and Biaxial StrainArtikel Article2007
9Dow, Ali B. Alamin ; Lin, H. ; Schneider, M. ; Petkov, C. ; Bittner, A. ; Ahmed, A. ; Popov, C. ; Schmid, U. ; Kherani, N. P. Ultrananocrystalline Diamond-Based High-Velocity SAW Device Fabricated by Electron Beam LithographyArtikel Article2012