Record link: 
http://hdl.handle.net/20.500.12708/168429
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Title: 
Electron Mobility Model for 〈110〉 Stressed Silicon Including Strain-Dependent Mass
en
Citation: 
Dhar, S., Ungersböck, S. E., Kosina, H., Grasser, T., & Selberherr, S. (2007). Electron Mobility Model for 〈110〉 Stressed Silicon Including Strain-Dependent Mass. IEEE Transactions on Nanotechnology, 6(1), 97–100. https://doi.org/10.1109/tnano.2006.888533
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Publisher DOI: 
10.1109/tnano.2006.888533
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Publication Type: 
Article - Original Research Article
en
Language: 
English
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Authors: 
Dhar, Siddhartha 
Ungersböck, Stephan Enzo 
Kosina, Hans 
Grasser, Tibor 
Selberherr, Siegfried 
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Organisational Unit: 
E360 - Institut für Mikroelektronik 
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Journal: 
IEEE Transactions on Nanotechnology 
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ISSN: 
1536-125X
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Date (published): 
15-Jan-2007
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Number of Pages: 
4
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Publisher: 
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
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Peer reviewed: 
Yes
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Keywords: 
Electrical and Electronic Engineering; Computer Science Applications
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Research Areas: 
Nanoelectronics: 30%
Quantum Modelling and Simulation: 10%
Modelling and Simulation: 40%
Computational Materials Science: 20%
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Science Branch: 
Elektrotechnik, Elektronik
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