JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Title Titel
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
 
e-ISSN
2166-2754
 
ISSN
2166-2746
 
Publisher Herausgeber
A V S AMER INST PHYSICS
 
Publisher's Address Herausgeber Adresse
STE 1 NO 1, 2 HUNTINGTON QUADRANGLE, MELVILLE, USA, NY, 11747-4502
 
Listed in SCI Aufgelistet im SCI
 
Peer reviewed Begutachtet
 
 

Publications Publikationen

Results 21-34 of 34 (Search time: 0.002 seconds).

PreviewAuthor(s)TitleTypeIssue Date
21Starkov, Ivan ; Enichlmair, Hubert Local Oxide Capacitance as a Crucial Parameter for Characterization of Hot-Carrier Degradation in Long-Channel n-MOSFETsArtikel Article2013
22Roediger, Peter ; Mijic, Mario ; Zeiner, Clemens ; Lugstein, Alois ; Wanzenboeck, Heinz D. ; Bertagnolli, Emmerich Local, direct-write, damage-free thinning of germanium nanowiresArtikel Article 2011
23Golka, Sebastian ; Schartner, Stefan ; Schrenk, Werner ; Strasser, Gottfried Low bias reactive ion etching of GaAs with a SiCl₄/N₂/O₂ time-multiplexed processArtikel Article2007
24Kaczer, B. ; Franco, J. ; Tyaginov, S. ; Jech, M. ; Rzepa, G. ; Grasser, T. ; O'Sullivan, B. J. ; Ritzenhaler, R. ; Schram, T. ; Spessot, A. ; Linten, D. ; Horiguchi, N. Mapping of CMOS FET Degradation in Bias Space--Application to Dram Peripheral DevicesArtikel Article 2017
25Ebm, Christoph ; Hobler, Gerhard ; Waid, Simon ; Wanzenboeck, Heinz D. Modeling of precursor coverage in ion-beam induced etching and verification with experiments using XeF2 on SiO2Artikel Article 2010
26Schanovsky, F. ; Gös, W. ; Grasser, T. Multiphonon Hole Trapping from First PrinciplesArtikel Article2011
27Wanzenböck, Heinz D. ; Waid, Simon ; Bertagnolli, Emmerich ; Mühlberger, Michael ; Bergmair, Iris ; Schöftner, Rainer Nanoimprint lithography stamp modification utilizing focused ion beamsArtikel Article 2009
28Ebm, Christoph ; Hobler, Gerhard ; Waid, Simon ; Wanzenboeck, Heinz D. Quantitative simulation of ion-beam induced deposition of nanostructuresArtikel Article 2011
29Kaczer, Ben ; Grasser, Tibor ; Franco, J. ; Toledano-Luque, M. ; Roussel, Ph. J. ; Cho, M. ; Simoen, E. ; Groeseneken, G. Recent Trends in Bias Temperature InstabilityArtikel Article2011
30Powell, Cedric J. ; Tougaard, Sven ; Werner, Wolfgang S. M. ; Smekal, Werner Sample-morphology effects on x-ray photoelectron peak intensitiesArtikel Article2013
31Makarov, A. ; Sverdlov, V. ; Selberherr, S. Stochastic Model of the Resistive Switching Mechanism in Bipolar Resistive Random Access Memory: Monte Carlo SimulationsArtikel Article2011
32Toledano-Luque, M. ; Kaczer, B. ; Roussel, Ph. ; Cho, M. J. ; Grasser, T. ; Groeseneken, G. Temperature Dependence of the Emission and Capture Times of SiON Individual Traps after Positive Bias Temperature StressArtikel Article2011
33Dedyk, Antonina ; Pavlova, Yulia ; Karmanenko, Sergey ; Semenov, Alexander ; Semikin, Dmitry ; Pakhomov, Oleg ; Starkov, Alexander ; Starkov, Ivan Temperature Hysteresis of the Capacitance Dependence C(T) for Ferroelectric CeramicsArtikel Article2011
34Toledano-Luque, María ; Kaczer, Ben ; Grasser, Tibor ; Roussel, Philippe J. ; Franco, Jacopo ; Groeseneken, Guido Toward a Streamlined Projection of Small Device Bias Temperature Instability Lifetime DistributionsArtikel Article2013