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| | Preview | Author(s) | Title | Type | Issue Date |
| 1 | | Ducry, Fabian ; Waldhoer, Dominic ; Knobloch, Theresia ; Csontos, Miklos ; Jimenez Olalla, Nadia ; Leuthold, Juerg ; Grasser, Tibor ; Luisier, Mathieu | An Ab Initio Study on Resistance Switching in Hexagonal Boron Nitride | Artikel Article  | 2022 |
| 2 | | van Loon, Erik G. C. P. ; Schüler, Malte ; Springer, Daniel ; Sangiovanni, Giorgio ; Tomczak, Jan M. ; Wehling, Tim Oliver | Coulomb engineering of two-dimensional Mott materials | Article Artikel | 6-Jul-2023 |
| 3 | | Furchi, Marco M. ; Höller, Florian ; Dobusch, Lukas ; Polyushkin, Dmitry K. ; Schuler, Simone ; Mueller, Thomas | Device physics of van der Waals heterojunction solar cells | Artikel Article | 2018 |
| 4 | | Panarella, Luca ; Kaczer, Ben ; Smets, Quentin ; Tyaginov, Stanislav ; Saraza-Canflanca, Pablo ; Vici, Andrea ; Verreck, Devin ; Schram, Tom ; Lin, Dennis ; Knobloch, Theresia ; Grasser, Tibor ; Lockhart de la Rosa, César ; Kar, Gouri Sankar ; Afanas’ev, Valeri | Evidence of contact-induced variability in industrially-fabricated highly-scaled MoS₂ FETs | Article Artikel | 14-Jul-2024 |
| 5 | | Mueller, Thomas ; Malic, Ermin | Exciton physics and device application of two-dimensional transition metal dichalcogenide semiconductors | Artikel Article | 2018 |
| 6 | | Sagade, Abhay A. ; Aria, Adrianus I. ; Edge, Steven ; Melgari, Paolo ; Gieseking, Bjoern ; Bayer, Bernhard C. ; Meyer, Jannik C. ; Bird, David ; Brewer, Paul ; Hofmann, Stephan | Graphene-based nanolaminates as ultra-high permeation barriers | Artikel Article | 2017 |
| 7 | | Illarionov, Yu. Yu. ; Waltl, M. ; Rzepa, G. ; Knobloch, T. ; Kim, J.-S. ; Akinwande, D. ; Grasser, T. | Highly-Stable Black Phosphorus Field-Effect Transistors with Low Density of Oxide Traps | Artikel Article | 2017 |
| 8 | | Panarella, L. ; Kaczer, B. ; Smets, Q. ; Nuytten, T. ; Van Troeye, B. ; Tyaginov, S. ; Saraza-Canflanca, P. ; Grasser, Tibor ; Lockhart de la Rosa, C. ; Kar, G. S. ; Afanas'ev, V. | Impact of doping and channel inhomogeneities on the stability of industrially fabricated WS₂ FETs | Article Artikel | 12-Jan-2026 |
| 9 | | Brunetti, Irene ; Pimpolari, Lorenzo ; Conti, Silvia ; Worsley, Robyn ; Majee, Subimal ; Polyushkin, Dmitry K. ; Paur, Matthias ; Dimaggio, Elisabetta ; PENNELLI, GIOVANNI ; Iannaccone, Giuseppe ; Macucci, Massimo ; Pieri, Francesco ; Mueller, Thomas ; Casiraghi, Cinzia ; Fiori, Gianluca | Inkjet-printed low-dimensional materials-based complementary electronic circuits on paper | Artikel Article | 2021 |
| 10 | | Elibol, Kenan ; Susi, Toma ; Mangler, Clemens ; Eder, Dominik ; Meyer, Jannik C. ; Kotakoski, Jani ; Hobbs, Richard G. ; van Aken, Peter A ; Bayer-Skoff, Bernhard Christian | Linear indium atom chains at graphene edges | Article Artikel | 25-Jan-2023 |
| 11 | | Illarionov, Yu. Yu. ; Karl, Alexander ; Smets, Q. ; Kaczer, Ben ; Knobloch, Theresia ; Panarella, L. ; Schram, T. ; Brems, S. ; Cott, D. ; Asselberghs, Inge ; Grasser, Tibor | Process implications on the stability and reliability of 300 mm FAB MoS₂ field-effect transistors | Article Artikel | 2-Feb-2024 |
| 12 | | Gupta, Tushar ; Elibol, Kenan ; Hummel, Stefan ; Mangler, Clemens ; Habler, Gerlinde ; Meyer, Jannik C. ; Eder, Dominik ; Bayer, B. C. ; Stöger-Pollach, Michael | Resolving few-layer antimonene/graphene heterostructures | Artikel Article | 2021 |
| 13 | | Illarionov, Yu. Yu. ; Knobloch, Theresia ; Uzlu, Burkay ; Banshchikov, Alexander ; Ivanov, I. A. ; Sverdlov, Viktor ; Otto, Martin ; Stoll, S. L. ; Vexler, Mikhail ; Waltl, Michael ; Wang, Z. ; Manna, Bibhas ; Neumaier, Daniel ; Lemme, Max ; Sokolov, N. S. ; Grasser, Tibor | Variability and high temperature reliability of graphene field-effect transistors with thin epitaxial CaF₂ insulators | Article Artikel | 19-Mar-2024 |
