Waltl, Michael

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Full name Familienname, Vorname
Waltl, Michael
 
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Date Issued:  [2000 TO 2024]
Subject:  Mechanics of Materials

Results 1-6 of 6 (Search time: 0.003 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Waltl, Michael ; Knobloch, Theresia ; Tselios, Konstantinos ; Filipovic, Lado ; Stampfer, Bernhard ; Hernandez, Yoanlys ; Waldhör, Dominic ; Illarionov, Yury ; Kaczer, Ben ; Grasser, Tibor Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology?Artikel Article 2022
2Waltl, Michael ; Hernandez, Yoanlys ; Schleich, Christian ; Waschneck, Katja ; Stampfer, Bernhard ; Reisinger, Hans ; Grasser, Tibor Performance Analysis of 4H-SiC Pseudo-D CMOS Inverter Circuits Employing Physical Charge Trapping ModelsArtikel Article 2022
3Illarionov, Yury Yu ; Banshchikov, Alexander G ; Polyushkin, Dmitry K ; Wachter, Stefan ; Knobloch, Theresia ; Thesberg, Mischa ; Vexler, Mikhail I ; Waltl, Michael ; Lanza, Mario ; Sokolov, Nikolai S ; Mueller, Thomas ; Grasser, Tibor Reliability of Scalable MoS2 FETs With 2 nm Crystalline CaF2 InsulatorsArtikel Article 2019
4Illarionov, Yury Yu ; Knobloch, Theresia ; Waltl, Michael ; Rzepa, Gerhard ; Pospischil, Andreas ; Polyushkin, Dmitry ; Furchi, Marco Mercurio ; Mueller, Thomas ; Grasser, Tibor Energetic mapping of oxide traps in MoS₂ field-effect transistorsArtikel Article Jun-2017
5Illarionov, Yu. Yu. ; Waltl, M. ; Rzepa, G. ; Knobloch, T. ; Kim, J.-S. ; Akinwande, D. ; Grasser, T. Highly-Stable Black Phosphorus Field-Effect Transistors with Low Density of Oxide TrapsArtikel Article 2017
6Illarionov, Yury Yu ; Rzepa, Gerhard ; Waltl, Michael ; Knobloch, Theresia ; Grill, Alexander ; Furchi, Marco Mercurio ; Mueller, Thomas ; Grasser, Tibor The role of charge trapping in Mo₂/SiO₂ and MoS₂/hBN field-effect transistorsArtikel Article Sep-2016