Record link: 
http://hdl.handle.net/20.500.12708/148754
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Title: 
The role of charge trapping in Mo₂/SiO₂ and MoS₂/hBN field-effect transistors
en
Citation: 
Illarionov, Y. Y., Rzepa, G., Waltl, M., Knobloch, T., Grill, A., Furchi, M. M., Mueller, T., & Grasser, T. (2016). The role of charge trapping in Mo₂/SiO₂ and MoS₂/hBN field-effect transistors. 2D Materials, 3(3), 035004. https://doi.org/10.1088/2053-1583/3/3/035004
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Publisher DOI: 
10.1088/2053-1583/3/3/035004
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Publication Type: 
Article - Original Research Article
en
Language: 
English
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Authors: 
Illarionov, Yury Yu 
Rzepa, Gerhard 
Waltl, Michael 
Knobloch, Theresia 
Grill, Alexander 
Furchi, Marco Mercurio 
Mueller, Thomas 
Grasser, Tibor 
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Organisational Unit: 
E360 - Institut für Mikroelektronik 
E387-01 - Forschungsbereich Photonik 
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Journal: 
2D Materials 
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ISSN: 
2053-1583
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Date (published): 
Sep-2016
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Number of Pages: 
10
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Publisher: 
IOP PUBLISHING LTD
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Peer reviewed: 
Yes
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Keywords: 
Mechanical Engineering; Mechanics of Materials; Condensed Matter Physics; General Materials Science; General Chemistry
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Research Areas: 
Modelling and Simulation: 100%
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Science Branch: 
Elektrotechnik, Elektronik, Informationstechnik
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