Name Card

Full name Familienname, Vorname
Capriotti, Mattia
 
Main Affiliation Organisations­zuordnung
 

Own Publications Eigene Publikationen


Results 1-20 of 23 (Search time: 0.004 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Lancaster, Suzanne ; MacFarland, Donald ; Capriotti, M ; Andrews, Aaron Maxwell ; Schrenk, Werner ; Strasser, Gottfried ; Detz, Hermann InGaAS/GaAs multi-quantum-well core-shell nanowires for optoelectronic applicationsKonferenzbeitrag Inproceedings2017
2Capriotti, M ; Bahat Treidel, E. ; Fleury, Clement ; Bethge, Ole ; Ostermaier, Clemens ; Rigato, Matteo ; Lancaster, Suzanne ; Brunner, Frank ; Detz, Hermann ; Hilt, O ; Würfl, Joachim ; Pogany, Dionyz ; Strasser, Gottfried Effect of barrier recess on transport and electrostatic interface properties of GaN-based normally-off and normally-on metal oxide semiconductor heterostructure field effect transistorsArtikel Article Nov-2016
3Meneghini, M. ; Hilt, O. ; Fleury, C. ; Silvestri, R. ; Capriotti, M. ; Strasser, G. ; Pogany, D. ; Bahat-Treidel, E. ; Brunner, F. ; Knauer, A. ; Würfl, J. ; Rossetto, I. ; Zanoni, E. ; Meneghesso, G. ; Dalcanale, S. Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate-stress and ESD failureArtikel Article 2016
4Fleury, Clement ; Capriotti, M ; Rigato, Matteo ; Hilt, O ; Würfl, Joachim ; Derluyn, Joff ; Strasser, Gottfried ; Pogany, Dionyz Vertical breakdown in AlGaN/GaN high electron mobility transistorsPräsentation Presentation2015
5Lancaster, Suzanne ; Kriz, Martin ; Capriotti, M ; Schinnerl, Markus ; Lilley, Govinda ; Detz, Hermann ; Strasser, Gottfried III-V Nanowires for Optoelectronic ApplicationsKonferenzbeitrag Inproceedings2015
6Capriotti, M ; Fleury, Clement ; Bethge, Ole ; Rigato, Matteo ; Lancaster, Suzanne ; Pogany, Dionyz ; Strasser, Gottfried E-mode AlGaN/GaN True-MOS, with High-k ZrO2 Gate InsulatorKonferenzbeitrag Inproceedings2015
7Capriotti, M ; Bahat-Treidel, E. ; Fleury, Clement ; Bethge, Ole ; Brunner, Frank ; Hilt, O ; Würfl, Joachim ; Pogany, Dionyz ; Strasser, Gottfried High performances normally-off AlGaN/GaN True-MOS with sub-micrometric gate featuresPräsentation Presentation2015
8Detz, Hermann ; Kriz, Martin ; MacFarland, Donald ; Lancaster, Suzanne ; Zederbauer, Tobias ; Capriotti, M ; Andrews, Aaron Maxwell ; Schrenk, Werner ; Strasser, Gottfried Nucleation of Ga droplets on Si and SiOx surfacesArtikel Article2015
9Capriotti, M ; Fleury, Clement ; Ostermaier, C ; Strasser, Gottfried ; Pogany, Dionyz Interaction Between the Instrinsic Frequency Response of the III-N Barrier Layer and Interface States in III-N MIS-HEMTs in Spill-Over RegimeKonferenzbeitrag Inproceedings2015
10Rigato, Matteo ; Fleury, Clément ; Heer, Michael ; Capriotti, Mattia ; Simbürger, Werner ; Pogany, Dionyz ESD characterization of mulit-finger RF nMOSFET transistors by TLP and transient interferometric mapping techniqueArtikel Article 2015
11Capriotti Mattia - 2015 - GaN-based E-mode metal insulator semiconductor...pdf.jpgCapriotti, Mattia GaN-based E-mode metal insulator semiconductor heterostructure field effect transistorThesis Hochschulschrift 2015
12Capriotti, M. ; Lagger, P. ; Fleury, C. ; Oposich, M. ; Bethge, O. ; Ostermaier, C. ; Strasser, G. ; Pogany, D. Modeling small-signal response of GaN-based metal-insulator-semiconductor high electron mobility transistor gate stack in spill-over regime: Effect of barrier resistance and interface statesArtikel Article 2015
13Fleury, Clément ; Capriotti, Mattia ; Rigato, Matteo ; Hilt, Oliver ; Würfl, Joachim ; Derluyn, Joff ; Steinhauer, Stephan ; Köck, Anton ; Strasser, Gottfried ; Pogany, Dionyz High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applicationsArtikel Article 2015
14Fleury, Clement ; Capriotti, M ; Rigato, Matteo ; Hilt, O ; Würfl, Joachim ; Derluyn, Joff ; Steinhauer, S. ; Köck, Anton ; Strasser, Gottfried ; Pogany, Dionyz High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applicationsPräsentation Presentation2015
15Capriotti, M ; Bethge, Ole ; Fleury, Clement ; Alexewicz, Alexander ; Bertagnolli, Emmerich ; Pogany, Dionyz ; Strasser, Gottfried Gate dielectric in GaN-based Metal Oxide Semiconductor High Electron Mobility Transistors: an overview on technology, issues and limitationsPräsentation Presentation2014
16Capriotti, M ; Alexewicz, Alexander ; Fleury, Clement ; Derluyn, Joff ; Visalli, Domenica ; Pogany, Dionyz ; Strasser, Gottfried Different layer designs for normally-off GaN HEMTs with ultrathin AlN barrier, GaN cap and in situ SiN passivationPräsentation Presentation2014
17Fleury, Clement ; Capriotti, M ; Hilt, O ; Würfl, Joachim ; Strasser, Gottfried ; Pogany, Dionyz Temperature extraction in Normally-Off AlGaN/GaN HEMTs using Transient Interferometric Mapping0Präsentation Presentation2014
18Capriotti, M. ; Alexewicz, A. ; Fleury, C. ; Gavagnin, M. ; Bethge, O. ; Visalli, D. ; Derluyn, J. ; Wanzenböck, H. D. ; Bertagnolli, E. ; Pogany, D. ; Strasser, G. Fixed interface charges between AlGaN barrier and gate stack composed of in situ grown SiN and Al2O3 in AlGaN/GaN high electron mobility transistors with normally off capabilityArtikel Article2014
19Capriotti, M ; Lagger, Peter Willibald ; Fleury, Clement ; Stradiotto, Roberta ; Oposich, Martin ; Ostermaier, C ; Strasser, Gottfried ; Pogany, Dionyz Effect of III-N Barrier Resistance on CV Characteristics in GaN-based MOSHEMTs in Spill-Over RegimePräsentation Presentation2014
20Capriotti, M ; Alexewicz, Alexander ; Bethge, Ole ; Visalli, Domenica ; Derluyn, Joff ; Fleury, Clement ; Bertagnolli, Emmerich ; Pogany, Dionyz ; Strasser, Gottfried AlGaN/GaN MOSHEMTS with selective removal of In-Situ Grown SiN PassivationKonferenzbeitrag Inproceedings2013

Contributing Publications Mitbeteiligte Publikationen


Results 1-1 of 1 (Search time: 0.001 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Pyka, Stefanie C-V characterisation of MOCVD GaN p-n junctions for high-power HFETsThesis Hochschulschrift2014