Name Card

Full name Familienname, Vorname
Jungemann, Christoph
 

Own Publications Eigene Publikationen

Results 1-9 of 9 (Search time: 0.001 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Jech, Markus ; El-Sayed, Al-Moatasem ; Tyaginov, Stanislav ; Waldhör, Dominic ; Bouakline, Foudhil ; Saalfrank, Peter ; Jabs, Dominic ; Jungemann, Christoph ; Waltl, Michael ; Grasser, Tibor Quantum Chemistry Treatment of Silicon-Hydrogen Bond Rupture by Nonequilibrium Carriers in Semiconductor DevicesArtikel Article 2021
2Jech, Markus ; Rott, Gunnar ; Reisinger, Hans ; Tyaginov, Stanislav ; Rzepa, Gerhard ; Grill, Alexander ; Jabs, Dominic ; Jungemann, Christoph ; Waltl, Michael ; Grasser, Tibor Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {VG, VD} Bias Space: Implications and PeculiaritiesArtikel Article 8-Aug-2020
3Jech, Markus ; Ullmann, Bianka ; Rzepa, Gerhard ; Tyaginov, Stanislav ; Grill, Alexander ; Waltl, Michael ; Jabs, Dominic ; Jungemann, Christoph ; Grasser, Tibor Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part II: TheoryArtikel Article 2019
4Starkov, Ivan ; Ceric, Hajdin ; Tyaginov, Stanislav ; Grasser, Tibor ; Enichlmair, Hubert ; Park, Jong-Mun ; Jungemann, Christoph Analysis of worst-case hot-carrier degradation conditions in the case of n- and p-channel high-voltage MOSFETsKonferenzbeitrag Inproceedings2011
5Tyaginov, Stanislav ; Starkov, Ivan ; Triebl, Oliver ; Ceric, Hajdin ; Grasser, Tibor ; Enichlmair, Hubert ; Park, Jong-Mun ; Jungemann, Christoph Secondary generated holes as a crucial component for modeling of HC degradation in high-voltage n-MOSFETKonferenzbeitrag Inproceedings2011
6Tyaginov, Stanislav E. ; Starkov, Ivan ; Enichlmair, Hubert ; Park, Jong Mun ; Jungemann, Christoph ; Grasser, Tibor Physics-Based Hot-Carrier Degradation ModelingBuchbeitrag Book Contribution2011
7Sangiorgi, Enrico ; Asenov, Asen ; Bennett, Herbert S. ; Dutton, Robert W. ; Esseni, David ; Giles, Martin D. ; Hane, Masami ; Jungemann, Christoph ; Nishi, Kenji ; Selberherr, Siegfried ; Takagi, Shinichi Foreword Special Issue on Simulation and Modeling of Nanoelectronics DevicesArtikel Article2007
8Krishnamohan, Tejas ; Jungemann, Christoph ; Kim, Donghyun ; Ungersboeck, Enzo ; Selberherr, Siegfried ; Wong, Philip ; Nishi, Yoshio ; Saraswat, Krishna Theoretical Investigation Of Performance In Uniaxially- and Biaxially-Strained Si, SiGe and Ge Double-Gate p-MOSFETsKonferenzbeitrag Inproceedings2006
9Grasser, Tibor ; Kosik, Robert ; Jungemann, Christoph ; Meinerzhagen, Bernd ; Kosina, Hans ; Selberherr, Siegfried A Non-Parabolic Six Moments Model for the Simulation of Sub-100 nm Semiconductor DevicesArtikel Article 2004

Contributing Publications Mitbeteiligte Publikationen

Results 1-1 of 1 (Search time: 0.001 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Rupp Karl - 2011 - Deterministic numerical solution of the Boltzmann transport...pdf.jpgRupp, KarlDeterministic numerical solution of the Boltzmann transport equationThesis Hochschulschrift 2011