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Full name Familienname, Vorname
Aichinger, Thomas
 
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Results 1-20 of 46 (Search time: 0.001 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Feil, Maximilian W. ; Weger, M. ; Reisinger, Hans ; Aichinger, Thomas ; Kabakow, André ; Waldhör, Dominic ; Jakowetz, Andreas C. ; Prigann, Sven ; Pobegen, Gregor ; Gustin, Wolfgang ; Waltl, Michael ; Bockstedte, Michel ; Grasser, Tibor Time-gated optical spectroscopy of field-effect-stimulated recombination via interfacial point defects in fully processed silicon carbide power MOSFETsArticle Artikel 30-Aug-2024
2Feil, Maximilian ; Waschneck, Katja ; Reisinger, Hans ; Berens, Judith ; Aichinger, Thomas ; Prigann, Sven ; Pobegen, Gregor ; Salmen, Paul ; Rescher, Gerald ; Waldhör, Dominic ; Vasilev, Alexander ; Gustin, Wolfgang ; Waltl, Michael ; Grasser, Tibor Gate Switching Instability in Silicon Carbide MOSFETs—Part I: ExperimentalArticle Artikel Jul-2024
3Grasser, Tibor ; Feil, Maximilian Wolfgang ; Waschneck, Katja ; Reisinger, Hans ; Berens, Judith ; Waldhör, Dominic ; Vasilev, Alexander ; Waltl, Michael ; Aichinger, Thomas ; Bockstedte, Michel ; Gustin, Wolfgang ; Pobegen, Gregor Gate Switching Instability in Silicon Carbide MOSFETs—Part II: ModelingArticle Artikel Jul-2024
4Grasser, Tibor ; Feil, Maximilian ; Waschneck, Katja ; Reisinger, Hans ; Berens, Judith ; Waldhör, Dominic ; Vasilev, Alexander ; Waltl, Michael ; Aichinger, Thomas ; Bockstedte, Michel ; Gustin, Wolfgang ; Pobegen, Gregor A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETsInproceedings Konferenzbeitrag 2024
5Feil, Maximilian Wolfgang ; Reisinger, Hans ; Kabakow, André ; Aichinger, Thomas ; Schleich, Christian ; Vasilev, Aleksandr ; Waldhör, Dominic ; Waltl, Michael ; Gustin, Wolfgang ; Grasser, Tibor Electrically stimulated optical spectroscopy of interface defects in wide-bandgap field-effect transistorsArticle Artikel 31-Jan-2023
6Berens, J. ; Weger, M. ; Pobegen, G. ; Aichinger, T. ; Rescher, G. ; Schleich, C. ; Grasser, T. Similarities and Differences of BTI in SiC and Si Power MOSFETsKonferenzbeitrag Inproceedings 2020
7Berens, Judith ; Pobegen, Gregor ; Rescher, Gerald ; Aichinger, Thomas ; Grasser, Tibor NH₃ and NO + NH₃ Annealing of 4H-SiC Trench MOSFETs: Device Performance and ReliabilityArtikel Article 2019
8Puschkarsky, K. ; Grasser, T. ; Aichinger, T. ; Gustin, W. ; Reisinger, H. Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage InstabilityArtikel Article 2019
9Puschkarsky, Katja ; Reisinger, Hans ; Aichinger, Thomas ; Gustin, Wolfgang ; Grasser, Tibor Understanding BTI in SiC MOSFETs and Its Impact on Circuit OperationArtikel Article 2018
10Rescher, Gerald ; Pobegen, Gregor ; Aichinger, Thomas ; Grasser, Tibor Preconditioned BTI on 4H-SiC: Proposal for a Nearly Delay Time-Independent Measurement TechniqueArtikel Article 2018
11Rescher, Gerald ; Pobegen, Gregor ; Aichinger, Thomas ; Grasser, Tibor Comprehensive Evaluation of Bias Temperature Instabilities on 4H-SiC MOSFETs Using Device PreconditioningArtikel Article 2018
12Puschkarsky, Katja ; Grasser, Tibor ; Aichinger, T. ; Gustin, W. ; Reisinger, H. Understanding and Modeling Transient Threshold Voltage Instabilities in SiC MOSFETsKonferenzbeitrag Inproceedings 2018
13Rescher, Gerald ; Pobegen, Gregor ; Aichinger, Thomas ; Grasser, Tibor Improved Interface Trap Density Close to the Conduction Band Edge of a-Face 4H-SiC MOSFETs Revealed Using the Charge Pumping TechniqueArtikel Article2017
14Puschkarsky, Katja ; Reisinger, H. ; Aichinger, T. ; Gustin, W. ; Grasser, Tibor Threshold Voltage Hysteresis in SiC MOSFETs and Its Impact on Circuit OperationKonferenzbeitrag Inproceedings2017
15Rescher, Gerald ; Pobegen, Gregor ; Aichinger, Thomas ; Grasser, Tibor On the subthreshold drain current sweep hysteresis of 4H-SiC nMOSFETsKonferenzbeitrag Inproceedings2016
16Pobegen, Gregor ; Aichinger, Thomas ; Salinaro, Alberto ; Grasser, Tibor Impact of Hot Carrier Degradation and Positive Bias Temperature Stress on Lateral 4H-SiC nMOSFETsArtikel Article2014
17Gasser, Christoph ; Aichinger, Thomas ; Ofner, Johannes ; Lendl, Bernhard Stand-off Spatially Offset Raman spectroscopy: towards 3D stand-off imagingKonferenzbeitrag Inproceedings2014
18Gasser, Christoph ; Aichinger, Thomas ; Ofner, Johannes ; Lendl, Bernhard Stand-off Spatially Offset Raman spectroscopyKonferenzbeitrag Inproceedings2014
19Aichinger, Thomas ; Nelhiebel, Michael ; Grasser, Tibor Refined NBTI Characterization of Arbitrarily Stressed PMOS Devices at Ultra-low and Unique TemperaturesArtikel Article 2013
20Aichinger, T. ; Lenahan, P. M. ; Grasser, Tibor ; Pobegen, G. ; Nelhiebel, M. Evidence for Pb Center-Hydrogen Complexes after Subjecting PMOS Devices to NBTI Stress - a Combined DCIV/SDR StudyKonferenzbeitrag Inproceedings2012