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Park, Jongmun

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TU Wien

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	Author(s)	Title	Type	Issue Date
1	Sharma, Prateek ; Tyaginov, Stanislav ; Wimmer, Yannick ; Rudolf, Florian ; Rupp, Karl ; Bina, Markus ; Enichlmair, Hubert ; Park, Jong-Mun ; Ceric, Hajdin ; Grasser, Tibor	Predictive and efficient modeling of hot-carrier degradation in nLDMOS devices	Konferenzbeitrag Inproceedings	2015
2	Sharma, Prateek ; Tyaginov, Stanislav ; Wimmer, Yannick ; Rudolf, Florian ; Enichlmair, Hubert ; Park, Jong-Mun ; Ceric, Hajdin ; Grasser, Tibor	A model for hot-carrier degradation in nLDMOS transistors based on the exact solution of the Boltzmann transport equation versus the drift-diffusion scheme	Konferenzbeitrag Inproceedings	2015
3	Sharma, Prateek ; Tyaginov, S. E. ; Wimmer, Yannick ; Rudolf, Florian ; Rupp, Karl ; Enichlmair, H. ; Park, J.M. ; Ceric, Hajdin ; Grasser, Tibor	Comparison of Analytic Distribution Function Models for Hot-Carrier Degradation in nLDMOSFETs	Konferenzbeitrag Inproceedings	2015
4	Sharma, Prateek ; Jech, Markus ; Tyaginov, Stanislav ; Rudolf, Florian ; Rupp, Karl ; Enichlmair, Hubert ; Park, Jong-Mun ; Grasser, Tibor	Modeling of hot-carrier degradation in LDMOS devices using a drift-diffusion based approach	Konferenzbeitrag Inproceedings	2015
5	Wimmer, Y. ; Tyaginov, S. ; Rudolf, F. ; Rupp, K. ; Bina, M. ; Enichlmair, H. ; Park, J.M. ; Minixhofer, R. ; Ceric, H. ; Grasser, T.	Physical modeling of hot-carrier degradation in nLDMOS transistors	Konferenzbeitrag Inproceedings	2014
6	Tyaginov, S. ; Bina, M. ; Franco, J. ; Wimmer, Y. ; Rudolf, F. ; Enichlmair, H. ; Park, J.M. ; Kaczer, B. ; Ceric, H. ; Grasser, T.	Dominant mechanisms of hot-carrier degradation in short- and long-channel transistors	Konferenzbeitrag Inproceedings	2014
7	Tyaginov, S. E. ; Osintsev, Dimitry ; Illarionov, Yury ; Park, J.M. ; Enichlmair, H. ; Vexler, M. I. ; Grasser, Tibor	Tunnelling of strongly non-equilibrium carriers in the transistors of traditional configuration	Konferenzbeitrag Inproceedings	2013
8	Cervenka, Johann ; Steinmair, Alexander ; Park, Jong Mun ; Seebacher, E. ; Grasser, Tibor	TCAD Simulations of Statistical Process Variations for High-Voltage LDMOS Transistors	Konferenzbeitrag Inproceedings	2012
9	Tyaginov, S. E. ; Starkov, I. A. ; Triebl, O. ; Karner, M. ; Kernstock, Ch. ; Jungemann, C. ; Enichlmair, H. ; Park, J.M. ; Grasser, T.	Impact of gate oxide thickness variations on hot-carrier degradation	Konferenzbeitrag Inproceedings	2012
10	Tyaginov, S. E. ; Starkov, Ivan ; Jungemann, C. ; Enichlmair, H. ; Park, Jong Mun ; Grasser, Tibor	Impact of the Carrier Distribution Function on Hot-Carrier Degradation Modeling	Konferenzbeitrag Inproceedings	2011
11	Tyaginov, S. E. ; Starkov, Ivan ; Enichlmair, H. ; Park, J.M. ; Jungemann, C. ; Grasser, Tibor	Physics-Based Hot-Carrier Degradation Modeling	Konferenzbeitrag Inproceedings	2011
12	Starkov, Ivan ; Tyaginov, S. E. ; Enichlmair, H. ; Park, Jong Mun ; Ceric, Hajdin ; Grasser, Tibor	Accurate Extraction of MOSFET Interface State Spatial Distribution from Charge Pumping Measurements	Konferenzbeitrag Inproceedings	2011
13	Tyaginov, S. E. ; Starkov, Ivan ; Enichlmair, H. ; Jungemann, C. ; Park, Jong Mun ; Seebacher, E. ; Orio, Roberto ; Ceric, Hajdin ; Grasser, Tibor	An Analytical Approach for Physical Modeling of Hot-Carrier Induced Degradation	Konferenzbeitrag Inproceedings	2011
14	Starkov, Ivan ; Ceric, Hajdin ; Tyaginov, Stanislav ; Grasser, Tibor ; Enichlmair, Hubert ; Park, Jong-Mun ; Jungemann, Christoph	Analysis of worst-case hot-carrier degradation conditions in the case of n- and p-channel high-voltage MOSFETs	Konferenzbeitrag Inproceedings	2011
15	Tyaginov, Stanislav ; Starkov, Ivan ; Triebl, Oliver ; Ceric, Hajdin ; Grasser, Tibor ; Enichlmair, Hubert ; Park, Jong-Mun ; Jungemann, Christoph	Secondary generated holes as a crucial component for modeling of HC degradation in high-voltage n-MOSFET	Konferenzbeitrag Inproceedings	2011
16	Tyaginov, Stanislav E. ; Starkov, Ivan ; Enichlmair, Hubert ; Park, Jong Mun ; Jungemann, Christoph ; Grasser, Tibor	Physics-Based Hot-Carrier Degradation Modeling	Buchbeitrag Book Contribution	2011
17	Starkov, Ivan ; Tyaginov, S. E. ; Triebl, Oliver ; Cervenka, Johann ; Jungemann, C. ; Carniello, Sara ; Park, Jong Mun ; Enichlmair, H. ; Karner, Markus ; Kernstock, Christian ; Seebacher, E. ; Minixhofer, R. ; Ceric, Hajdin ; Grasser, Tibor	Analysis of Worst-Case Hot-Carrier Conditions for High Voltage Transistors Based on Full-Band Monte-Carlo Simulations	Konferenzbeitrag Inproceedings	2010
18	Tyaginov, S. E. ; Starkov, Ivan ; Triebl, Oliver ; Cervenka, Johann ; Jungemann, C. ; Carniello, Sara ; Park, Jong Mun ; Enichlmair, H. ; Karner, Markus ; Kernstock, Christian ; Seebacher, E. ; Minixhofer, R. ; Ceric, Hajdin ; Grasser, Tibor	Hot-Carrier Degradation Modeling Using Full-Band Monte-Carlo Simulations	Konferenzbeitrag Inproceedings	2010
19	Starkov, Ivan ; Tyaginov, S. E. ; Enichlmair, H. ; Triebl, Oliver ; Cervenka, Johann ; Jungemann, C. ; Carniello, Sara ; Park, Jong Mun ; Ceric, Hajdin ; Grasser, Tibor	HC Degradation Model: Interface State Profile-Simulations vs. Experiment	Konferenzbeitrag Inproceedings	2010
20	Tyaginov, S. E. ; Starkov, Ivan ; Triebl, Oliver ; Cervenka, Johann ; Jungemann, C. ; Carniello, Sara ; Park, Jong Mun ; Enichlmair, H. ; Karner, Markus ; Kernstock, Christian ; Seebacher, E. ; Minixhofer, R. ; Ceric, Hajdin ; Grasser, Tibor	Interface Traps Density-of-States as a Vital Component for Hot-Carrier Degradation Modeling	Konferenzbeitrag Inproceedings	2010