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Palankovski, Vassil
 
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Results 1-20 of 86 (Search time: 0.002 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Palankovski, V. ; Vainshtein, S. ; Yuferev, V. ; Kostamovaara, J. ; Egorkin, V. Effect of Hot-Carrier Energy Relaxation on Main Properties of Collapsing Field Domains in Avalanching GaAsArtikel Article2015
2Axelevitch, A. ; Palankovski, V. ; Selberherr, S. ; Golan, G. Investigation of Novel Silicon PV Cells of a Lateral TypeArtikel Article2015
3Molnár, M. ; Donoval, D. ; Kuzmík, J. ; Marek, J. ; Chvála, A. ; Príbytný, P. ; Mikolášek, M. ; Rendek, K. ; Palankovski, V. Simulation study of interface traps and bulk traps in n⁺⁺GaN/InAlN/AlN/GaN high electron mobility transistorsArtikel Article 1-Sep-2014
4Tapajna, Milan ; Killat, Nicole ; Palankovski, Vassil ; Gregusova, Dagmar ; Cico, Karol ; Carlin, Jean-Francois ; Grandjean, Nicolas ; Kuball, Martin ; Kuzmik, Jan Hot-Electron-Related Degradation in InAlN/GaN High-Electron-Mobility TransistorsArtikel Article 2014
5Molnar, Marian ; Palankovski, Vassil ; Donoval, D ; Kuzmik, J. ; Kovac, J ; Chvala, A ; Marek, J ; Pribytny, P. ; Selberherr, Siegfried Modeling and Characterization of InAlN/GaN HEMTs at Elevated TemperaturesKonferenzbeitrag Inproceedings2013
6Molnar, Marian ; Palankovski, Vassil ; Donoval, D ; Kuzmik, J. ; Kovac, J ; Chvala, A ; Marek, J ; Pribytny, P. ; Selberherr, Siegfried Characterization of InAlN/GaN HEMTs at Elevated Temperatures Supported by Numerical SimulationKonferenzbeitrag Inproceedings2013
7Jurkovic, M. ; Gregusova, D. ; Palankovski, V. ; Hascik, Stefan ; Blaho, M. ; Cico, K. ; Frohlich, K. ; Carlin, J. ; Grandjean, N. ; Kuzmik, J. Schottky-Barrier Normally Off GaN/InAlN/AlN/GaN HEMT With Selectively Etched Access RegionArtikel Article 2013
8Vitanov, Stanislav ; Palankovski, Vassil ; Maroldt, S. ; Quay, Rüdiger ; Murad, S. ; Rödle, T. ; Selberherr, Siegfried Physics-Based Modeling of GaN HEMTsArtikel Article 25-Jan-2012
9Kuzmik, Jan ; Vitanov, Stanislav ; Dua, Christian ; Carlin, Jean-Francois ; Ostermaier, Clemens ; Alexewicz, Alexander ; Strasser, Gottfried ; Pogany, Dionyz ; Gornik, Erich ; Grandjean, Nicolas ; Delage, Sylvain ; Palankovski, Vassil Buffer-Related Degradation Aspects of Single and Double-Heterostructure Quantum Well InAlN/GaN High-Electron-Mobility TransistorsArtikel Article2012
10Serrano-Lopez, I.J. ; Garcia-Barrientos, Abel ; Palankovski, Vassil ; del Carmen Cruz-Netro, L. Non-Stationary Effects of Space Charge in InN FilmsKonferenzbeitrag Inproceedings2012
11Axelevitch, Alexander ; Palankovski, Vassil ; Selberherr, Siegfried ; Golan, G. Large Silicon Solar Cells of a Lateral TypePräsentation Presentation2012
12Palankovski, Vassil Photovoltaic and Thermoelectric Devices for Renewable Energy HarnessingPräsentation Presentation2012
13Palankovski, Vassil ; Kuzmik, J. A Promising New n++-GaN/InAlN/GaN HEMT Concept for High-Frequency ApplicationsKonferenzbeitrag Inproceedings2012
14Molnar, Marian ; Donnarumma, Gesualdo ; Palankovski, Vassil ; Kuzmik, Jan ; Donoval, Daniel ; Kovac, Jaroslav ; Selberherr, Siegfried Electrothermal analysis of In<inf>0.12</inf>Al<inf>0.88</inf>N/GaN HEMTsKonferenzbeitrag Inproceedings2012
15Palankovski, Vassil ; Kuzmik, J. Degradation Study of Single and Double-Heterojunction InAlN/GaN HEMTs by Two-Dimensional SimulationKonferenzbeitrag Inproceedings2012
16Molnar, Marian ; Donnarumma, Gesualdo ; Palankovski, Vassil ; Kuzmik, J. ; Donoval, D ; Kovac, J ; Selberherr, Siegfried Characterization, Modeling and Simulation of In0.12Al0.88N/GaN HEMTsKonferenzbeitrag Inproceedings 2012
17Jurkovic, M ; Gregusova, Dagmar ; Hascik, S. ; Blaho, M. ; Molnar, Marian ; Palankovski, Vassil ; Donoval, D ; Carlin, J.-F ; Grandjean, Nicolas ; Kuzmik, J. GaN/InAlN/AlN/GaN Normally-Off HEMT with Etched Access RegionKonferenzbeitrag Inproceedings2012
18Jurkovic, M ; Gregusova, Dagmar ; Hascik, S. ; Blaho, M. ; Cico, Karol ; Palankovski, Vassil ; Carlin, J.-F ; Grandjean, Nicolas ; Kuzmik, Jan Polarization Engineered Normally-Off GaN/InlN/AlN/GaN HEMTKonferenzbeitrag Inproceedings2012
19Donnarumma, Gesualdo ; Palankovski, Vassil ; Selberherr, Siegfried Influence of Bandgap Narrowing and Carrier Lifetimes on the Forward Current-Voltage Characteristics of a 4H-SiC p-i-n DiodeKonferenzbeitrag Inproceedings2012
20Palankovski, Vassil ; Donnarumma, Gesualdo ; Kuzmik, Jan Degradation Study of Single and Double-Heterojunction InAlN/GaN HEMTs by Two-Dimensional SimulationBuchbeitrag Book Contribution2012