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Rott, K.
 

Own Publications Eigene Publikationen

Results 1-17 of 17 (Search time: 0.001 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Grasser, Tibor ; Rott, K. ; Reisinger, H. ; Waltl, Michael ; Franco, J. ; Kaczer, Ben A unified perspective of RTN and BTIKonferenzbeitrag Inproceedings2014
2Grasser, Tibor ; Rott, K. ; Reisinger, H. ; Waltl, Michael ; Gös, Wolfgang Evidence for Defect Pairs in SiON pMOSFETsKonferenzbeitrag Inproceedings2014
3Waltl, Michael ; Gös, Wolfgang ; Rott, K. ; Reisinger, H. ; Grasser, Tibor A Single-Trap Study of PBTI in SiON nMOS Transistors: Similarities and Differences to the NBTI/pMOS CaseKonferenzbeitrag Inproceedings2014
4Illarionov, Yury ; Bina, Markus ; Tyaginov, S. E. ; Rott, K. ; Reisinger, H. ; Kaczer, Ben ; Grasser, Tibor A Reliable Method for the Extraction of the Lateral Position of Defects in Ultra-scaled MOSFETsKonferenzbeitrag Inproceedings2014
5Grasser, T. ; Goes, W. ; Wimmer, Y. ; Schanovsky, F. ; Rzepa, G. ; Waltl, M. ; Rott, K. ; Reisinger, H. ; Afanas'ev, V.V. ; Stesmans, A. ; El-Sayed, Al-Moatasem Bellah ; Shluger, A.L. On the microscopic structure of hole traps in pMOSFETsKonferenzbeitrag Inproceedings2014
6Rzepa, G. ; Goes, W. ; Rott, G. ; Rott, K. ; Karner, M. ; Kernstock, C. ; Kaczer, B. ; Reisinger, H. ; Grasser, T. Physical modeling of NBTI: From individual defects to devicesKonferenzbeitrag Inproceedings2014
7Rott, Gunnar Andreas ; Rott, K. ; Reisinger, H. ; Gustin, W. ; Grasser, Tibor Mixture of Negative Bias Temperature Instability and Hot-Carrier Driven Threshold Voltage Degradation of 130 nm Technology p-Channel TransistorsKonferenzbeitrag Inproceedings2014
8Grasser, T. ; Rzepa, G. ; Waltl, M. ; Goes, W. ; Rott, K. ; Rott, G. ; Reisinger, H. ; Franco, J. ; Kaczer, B. Characterization and modeling of charge trapping: From single defects to devicesKonferenzbeitrag Inproceedings 2014
9Grasser, Tibor ; Rott, K. ; Reisinger, H. ; Wagner, Paul-Jürgen ; Gös, Wolfgang ; Schanovsky, Franz ; Waltl, Michael ; Toledano-Luque, M. ; Kaczer, Ben Advanced Characterization of Oxide Traps: The Dynamic Time-Dependent Defect SpectroscopyKonferenzbeitrag Inproceedings2013
10Grasser, T. ; Rott, K. ; Reisinger, H. ; Waltl, M. ; Wagner, P. ; Schanovsky, F. ; Goes, W. ; Pobegen, G. ; Kaczer, B. Hydrogen-related volatile defects as the possible cause for the recoverable component of NBTIKonferenzbeitrag Inproceedings2013
11Grasser, Tibor ; Rott, K. ; Reisinger, H. ; Waltl, Michael ; Schanovsky, Franz ; Gös, Wolfgang ; Kaczer, Ben Recent Advances in Understanding Oxide Traps in pMOS TransistorsKonferenzbeitrag Inproceedings 2013
12Kaczer, B. ; Afanas'ev, V. V. ; Rott, K. ; Cerbu, F. ; Franco, J. ; Goes, W. ; Grasser, T. ; Madia, O. ; Nguyen, A. P. D. ; Stesmans, A. ; Reisinger, H. ; Toledano-Luque, M. ; Weckx, P. Experimental characterization of BTI defectsKonferenzbeitrag Inproceedings2013
13Grasser, T. ; Reisinger, H. ; Rott, K. ; Toledano-Luque, M. ; Kaczer, B. On the microscopic origin of the frequency dependence of hole trapping in pMOSFETsKonferenzbeitrag Inproceedings2012
14Waltl, Michael ; Wagner, Paul-Jürgen ; Reisinger, H. ; Rott, K. ; Grasser, Tibor Advanced Data Analysis Algorithms for the Time-Dependent Defect Spectroscopy of NBTIKonferenzbeitrag Inproceedings2012
15Rott, K. ; Reisinger, H. ; Aresu, S. ; Schlünder, C. ; Kölpin, K. ; Gustin, W. ; Grasser, T. New Insights on the PBTI Phenomena in SiON pMOSFETsArtikel Article2012
16Rott, K. ; Schmitt-Landsiedel, D. ; Reisinger, H. ; Rott, Gunnar Andreas ; Georgakos, G ; Schluender, C ; Aresu, S. ; Gustin, W. ; Grasser, Tibor Impact and measurement of short term threshold instabilities in MOSFETs of analog circuitsKonferenzbeitrag Inproceedings2012
17Breth, L. ; Dimopoulos, T. ; Schotter, J. ; Rott, K. ; Bruckl, H. ; Suess, D. Fluxgate Principle Applied to a Magnetic Tunnel Junction for Weak Magnetic Field SensingArtikel Article 2011