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Record link: 
http://hdl.handle.net/20.500.12708/75953
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Title: 
Mixture of Negative Bias Temperature Instability and Hot-Carrier Driven Threshold Voltage Degradation of 130 nm Technology p-Channel Transistors
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Citation: 
Rott, G. A., Rott, K., Reisinger, H., Gustin, W., & Grasser, T. (2014). Mixture of Negative Bias Temperature Instability and Hot-Carrier Driven Threshold Voltage Degradation of 130 nm Technology p-Channel Transistors. In Abstracts 25th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF) (p. 40). http://hdl.handle.net/20.500.12708/75953
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Publication Type: 
Inproceedings - Full-Paper Contribution
en
Authors: 
Rott, Gunnar Andreas 
Rott, K. 
Reisinger, H. 
Gustin, W. 
Grasser, Tibor 
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Organisational Unit: 
E360 - Institut für Mikroelektronik 
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Published in: 
Abstracts 25th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF) 
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Date (published): 
2014
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Event name: 
European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF) 
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Event date: 
29-Sep-2008 - 2-Oct-2008
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Event place: 
Maastricht, EU
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Number of Pages: 
1
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Peer reviewed: 
No
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Research Areas: 
Materials Characterization: 100%
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Science Branch: 
Elektrotechnik, Elektronik, Informationstechnik
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Appears in Collections:
Conference Paper

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