European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)

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European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)
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Event for scientific audience
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Results 1-20 of 52 (Search time: 0.003 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Dubec, Victor ; Bychikhin, Sergey ; Blaho, M. ; Pogany, Dionyz ; Gornik, Erich ; Willemen, Joost ; Qu, N ; Wilkening, W ; Zullino, L. ; Andreini, A. A dual-beam Michelson interferometer for investigation of trigger dynamics in ESD protection devices under very fast TLP stressPräsentation Presentation2003
2Grasser, Tibor ; Kaczer, Ben ; Gös, Wolfgang An Energy-Level Perspective of Bias Temperature InstabilityKonferenzbeitrag Inproceedings2008
3Ceric, Hajdin ; Zahedmanesh, Houman ; Croes, Kristof Analysis of Electromigration Failure of Nano-Interconnects through a Combination of Modeling and Experimental MethodsPräsentation Presentation2019
4Heer, Michael ; Dubec, Victor ; Bychikhin, Sergey ; Pogany, Dionyz ; Gornik, Erich ; Frank, M ; Konrad, A ; Schulz, J Analysis of triggering behaviour of high voltage CMOS LDMOS clamps and SCRs during ESD induced latch-upPräsentation Presentation2006
5Pogany, Dionyz ; Bychikhin, Sergey ; Heer, Michael ; Mamanee, Wasinee ; Gornik, Erich Application of transient interferometric mapping method for ESD and latch-up analysisPräsentation Presentation2011
6Heer, Michael ; Dubec, Victor ; Blaho, M. ; Bychikhin, Sergey ; Pogany, Dionyz ; Gornik, Erich ; Denison, Marie ; Stecher, Matthias ; Groos, Gerhard Automated setup for thermal imaging and electrical degradation study of power DMOS devicesPräsentation Presentation2005
7Dubec, Victor ; Bychikhin, Sergey ; Pogany, Dionyz ; Gornik, Erich ; Brodbeck, T ; Stadler, Wolfgang Backside Interferometric Methods for Localization of ESD-Induced Leakage Current and Metal ShortsPräsentation Presentation2007
8Pogany, Dionyz ; Esmark, Kai ; Litzenberger, Martin ; Fürböck, Christoph ; Gossner, Harald ; Gornik, Erich Bulk and surface degradation mode in 0.35um technology gg-nMOS ESD protection devicesPräsentation Presentation2000
9Sharma, Prateek ; Tyaginov, S. E. ; Wimmer, Yannick ; Rudolf, Florian ; Rupp, Karl ; Enichlmair, H. ; Park, J.M. ; Ceric, Hajdin ; Grasser, Tibor Comparison of Analytic Distribution Function Models for Hot-Carrier Degradation in nLDMOSFETsKonferenzbeitrag Inproceedings2015
10Stadler, Wolfgang ; Esmark, Kai ; Gossner, Harald ; Streibl, M. ; Wendel, M. ; Fichtner, W. ; Litzenberger, Martin ; Pogany, Dionyz ; Gornik, Erich Device Simulation and Backside Laser Interferometry - Powerful Tools for ESD Protection DevelopmentPräsentation Presentation2002
11Litzenberger, Martin ; Pichler, R. ; Bychikhin, Sergey ; Pogany, Dionyz ; Esmark, Kai ; Gossner, Harald ; Gornik, Erich Effect of pulse risetime on trigger homogeneity in single finger grounded gate nMOSFET electrostatic discharge protection structuresPräsentation Presentation2001
12Fleury, Clement ; Simbürger, Werner ; Pogany, Dionyz Effect of TLP rise time on ESD failure modes of collector-base junction of SiGe heterojunction bipolar transistorsPräsentation Presentation2019
13Pogany, Dionyz ; Kuzmik, Jan ; Darmo, Juraj ; Litzenberger, Martin ; Bychikhin, Sergey ; Unterrainer, Karl ; Gornik, Erich ; Mozolova, Z. ; Hascik, S. ; Lalinsky, T. Electrical fied mapping in InGaPHEMTs and GaAs teraherz emitters using backside infrared OBIC techniquePräsentation Presentation2002
14Zisser, Wolfhard ; Ceric, Hajdin ; Weinbub, Josef ; Selberherr, Siegfried Electromigration Reliability of Open TSV StructuresKonferenzbeitrag Inproceedings2014
15Ayalew, Tesfaye ; Gehring, Andreas ; Grasser, Tibor ; Selberherr, Siegfried Enhancement of Breakdown Voltage for Ni-SiC Schottky Diodes Utilizing Field Plate Edge TerminationPräsentation Presentation2004
16Rigato, Matteo ; Fleury, Clement ; Heer, Michael ; Simbürger, Werner ; Pogany, Dionyz ESD characterization of multi-finger RF nMOSFET transistors by TLP and transient interferometric mapping techniquePräsentation Presentation2015
17Heer, Michael ; Bychikhin, Sergey ; Mamanee, Wasinee ; Pogany, Dionyz ; Heid, A ; Grambach, P ; Klaussner, M ; Soppa, W. ; Ramler, B Experimental and numerical analysis of current flow homogeneity in low voltage SOI multi-finger gg-NMOS and NPN ESD protection devicesPräsentation Presentation2007
18Blaho, M. ; Pogany, Dionyz ; Gornik, Erich ; Zullino, L. ; Andreini, A. Expermental ans simulation analysis of a BCD ESD protection element under the DC and TLP stress conditionsPräsentation Presentation2002
19Fleury, Clement ; Capriotti, M ; Rigato, Matteo ; Hilt, O ; Würfl, Joachim ; Derluyn, Joff ; Steinhauer, S. ; Köck, Anton ; Strasser, Gottfried ; Pogany, Dionyz High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applicationsPräsentation Presentation2015
20Heer, Michael ; Grombach, P ; Heid, A ; Pogany, Dionyz Hot spot analysis during thermal shutdown of SOI BCDMOS half bridge driver for automotive applicationsPräsentation Presentation2008