European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)

Event name
European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)
 
Event type
Event for scientific audience
 
Start date
23-09-2019
End date
26-09-2019
 
Location
Maastricht
Country
Netherlands
 
Event format Veranstaltungsformat
On Site

Publications Publikationen

Results 1-20 of 52 (Search time: 0.003 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Dubec, Victor ; Bychikhin, Sergey ; Blaho, M. ; Pogany, Dionyz ; Gornik, Erich ; Willemen, Joost ; Qu, N ; Wilkening, W ; Zullino, L. ; Andreini, A. A dual-beam Michelson interferometer for investigation of trigger dynamics in ESD protection devices under very fast TLP stressPräsentation Presentation2003
2Grasser, Tibor ; Kaczer, Ben ; Gös, Wolfgang An Energy-Level Perspective of Bias Temperature InstabilityKonferenzbeitrag Inproceedings2008
3Ceric, Hajdin ; Zahedmanesh, Houman ; Croes, Kristof Analysis of Electromigration Failure of Nano-Interconnects through a Combination of Modeling and Experimental MethodsPräsentation Presentation2019
4Heer, Michael ; Dubec, Victor ; Bychikhin, Sergey ; Pogany, Dionyz ; Gornik, Erich ; Frank, M ; Konrad, A ; Schulz, J Analysis of triggering behaviour of high voltage CMOS LDMOS clamps and SCRs during ESD induced latch-upPräsentation Presentation2006
5Pogany, Dionyz ; Bychikhin, Sergey ; Heer, Michael ; Mamanee, Wasinee ; Gornik, Erich Application of transient interferometric mapping method for ESD and latch-up analysisPräsentation Presentation2011
6Heer, Michael ; Dubec, Victor ; Blaho, M. ; Bychikhin, Sergey ; Pogany, Dionyz ; Gornik, Erich ; Denison, Marie ; Stecher, Matthias ; Groos, Gerhard Automated setup for thermal imaging and electrical degradation study of power DMOS devicesPräsentation Presentation2005
7Dubec, Victor ; Bychikhin, Sergey ; Pogany, Dionyz ; Gornik, Erich ; Brodbeck, T ; Stadler, Wolfgang Backside Interferometric Methods for Localization of ESD-Induced Leakage Current and Metal ShortsPräsentation Presentation2007
8Pogany, Dionyz ; Esmark, Kai ; Litzenberger, Martin ; Fürböck, Christoph ; Gossner, Harald ; Gornik, Erich Bulk and surface degradation mode in 0.35um technology gg-nMOS ESD protection devicesPräsentation Presentation2000
9Sharma, Prateek ; Tyaginov, S. E. ; Wimmer, Yannick ; Rudolf, Florian ; Rupp, Karl ; Enichlmair, H. ; Park, J.M. ; Ceric, Hajdin ; Grasser, Tibor Comparison of Analytic Distribution Function Models for Hot-Carrier Degradation in nLDMOSFETsKonferenzbeitrag Inproceedings2015
10Stadler, Wolfgang ; Esmark, Kai ; Gossner, Harald ; Streibl, M. ; Wendel, M. ; Fichtner, W. ; Litzenberger, Martin ; Pogany, Dionyz ; Gornik, Erich Device Simulation and Backside Laser Interferometry - Powerful Tools for ESD Protection DevelopmentPräsentation Presentation2002
11Litzenberger, Martin ; Pichler, R. ; Bychikhin, Sergey ; Pogany, Dionyz ; Esmark, Kai ; Gossner, Harald ; Gornik, Erich Effect of pulse risetime on trigger homogeneity in single finger grounded gate nMOSFET electrostatic discharge protection structuresPräsentation Presentation2001
12Fleury, Clement ; Simbürger, Werner ; Pogany, Dionyz Effect of TLP rise time on ESD failure modes of collector-base junction of SiGe heterojunction bipolar transistorsPräsentation Presentation2019
13Pogany, Dionyz ; Kuzmik, Jan ; Darmo, Juraj ; Litzenberger, Martin ; Bychikhin, Sergey ; Unterrainer, Karl ; Gornik, Erich ; Mozolova, Z. ; Hascik, S. ; Lalinsky, T. Electrical fied mapping in InGaPHEMTs and GaAs teraherz emitters using backside infrared OBIC techniquePräsentation Presentation2002
14Zisser, Wolfhard ; Ceric, Hajdin ; Weinbub, Josef ; Selberherr, Siegfried Electromigration Reliability of Open TSV StructuresKonferenzbeitrag Inproceedings2014
15Ayalew, Tesfaye ; Gehring, Andreas ; Grasser, Tibor ; Selberherr, Siegfried Enhancement of Breakdown Voltage for Ni-SiC Schottky Diodes Utilizing Field Plate Edge TerminationPräsentation Presentation2004
16Rigato, Matteo ; Fleury, Clement ; Heer, Michael ; Simbürger, Werner ; Pogany, Dionyz ESD characterization of multi-finger RF nMOSFET transistors by TLP and transient interferometric mapping techniquePräsentation Presentation2015
17Heer, Michael ; Bychikhin, Sergey ; Mamanee, Wasinee ; Pogany, Dionyz ; Heid, A ; Grambach, P ; Klaussner, M ; Soppa, W. ; Ramler, B Experimental and numerical analysis of current flow homogeneity in low voltage SOI multi-finger gg-NMOS and NPN ESD protection devicesPräsentation Presentation2007
18Blaho, M. ; Pogany, Dionyz ; Gornik, Erich ; Zullino, L. ; Andreini, A. Expermental ans simulation analysis of a BCD ESD protection element under the DC and TLP stress conditionsPräsentation Presentation2002
19Fleury, Clement ; Capriotti, M ; Rigato, Matteo ; Hilt, O ; Würfl, Joachim ; Derluyn, Joff ; Steinhauer, S. ; Köck, Anton ; Strasser, Gottfried ; Pogany, Dionyz High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applicationsPräsentation Presentation2015
20Heer, Michael ; Grombach, P ; Heid, A ; Pogany, Dionyz Hot spot analysis during thermal shutdown of SOI BCDMOS half bridge driver for automotive applicationsPräsentation Presentation2008