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Full name Familienname, Vorname
Reisinger, Hans
 

Own Publications Eigene Publikationen

Results 1-11 of 11 (Search time: 0.001 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Waltl, Michael ; Hernandez, Yoanlys ; Schleich, Christian ; Waschneck, Katja ; Stampfer, Bernhard ; Reisinger, Hans ; Grasser, Tibor Performance Analysis of 4H-SiC Pseudo-D CMOS Inverter Circuits Employing Physical Charge Trapping ModelsArtikel Article 2022
2Schleich, Christian ; Waldhoer, Dominic ; Waschneck, Katja ; Feil, Maximilian W. ; Reisinger, Hans ; Grasser, Tibor ; Waltl, Michael Physical Modeling of Charge Trapping in 4H-SiC DMOSFET TechnologiesArtikel Article 2021
3Jech, Markus ; Rott, Gunnar ; Reisinger, Hans ; Tyaginov, Stanislav ; Rzepa, Gerhard ; Grill, Alexander ; Jabs, Dominic ; Jungemann, Christoph ; Waltl, Michael ; Grasser, Tibor Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {VG, VD} Bias Space: Implications and PeculiaritiesArtikel Article 8-Aug-2020
4Ullmann, Bianka ; Jech, Markus ; Puschkarsky, Katja ; Rott, Gunnar Andreas ; Waltl, Michael ; Illarionov, Yury ; Reisinger, Hans ; Grasser, Tibor Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part I: ExperimentalArtikel Article 2019
5Puschkarsky, Katja ; Reisinger, Hans ; Aichinger, Thomas ; Gustin, Wolfgang ; Grasser, Tibor Understanding BTI in SiC MOSFETs and Its Impact on Circuit OperationArtikel Article 2018
6Puschkarsky, Katja ; Reisinger, Hans ; Schlünder, Christian ; Gustin, Wolfgang ; Grasser, Tibor Voltage-Dependent Activation Energy Maps for Analytic Lifetime Modeling of NBTI Without Time ExtrapolationArtikel Article 2018
7Illarionov, Yury ; Bina, Markus ; Tyaginov, Stanislav ; Rott, Karina ; Kaczer, Ben ; Reisinger, Hans ; Grasser, Tibor Extraction of the Lateral Position of Border Traps in Nanoscale MOSFETsArtikel Article2015
8Grasser, Tibor ; Rott, Karina ; Reisinger, Hans ; Waltl, Michael ; Schanovsky, Franz ; Kaczer, Ben NBTI in Nanoscale MOSFETs-The Ultimate Modeling BenchmarkArtikel Article2014
9Rott, Gunnar Andreas ; Rott, Karina ; Reisinger, Hans ; Gustin, Wolfgang ; Grasser, Tibor Mixture of Negative Bias Temperature Instability and Hot-Carrier Driven Threshold Voltage Degradation of 130 nm Technology p-Channel TransistorsArtikel Article 2014
10Goes, Wolfgang ; Schanovsky, Franz ; Reisinger, Hans ; Kaczer, Ben ; Grasser, Tibor Bistable Defects as the Cause for NBTI and RTNArtikel Article2011
11Grasser, Tibor ; Reisinger, Hans ; Wagner, Paul-Jürgen ; Kaczer, Ben Time-Dependent Defect Spectroscopy for Characterization of Border Traps in Metal-Oxide-Semiconductor TransistorsArtikel Article2010