The gas sensing properties of Ga₂O₃ and In₂O₃, either in thin films or nanowire (NW) morphology, have been widely studied, establishing the charge transfer mechanisms that lead to resistance changes correlated with the concentration of the gas species. The synthesis of a mixed (Ga, In)₂O₃ material has been attempted and reported, but, to the best of our knowledge, there has been no attempt to use this material as gas sensor. In our study, we present the synthesis of different (Ga, In)₂O₃ NWs and the study of the sensing properties of gas sensors based on individual nanowires of this material. Working with sensors based on individual NWs permits a much lower power consumption compared to their bulk counterpart, attainable by an adequate device layout, allows to match the limits required in mobile gas sensing applications and the detailed study of the sensing material.