Record link: 
http://hdl.handle.net/20.500.12708/137122
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Title: 
Polycrystalline Ge Nanosheets Embedded in Metal‐Semiconductor Heterostructures Enabling Wafer‐Scale 3D Integration of Ge Nanodevices with Self‐Aligned Al Contacts
en
Citation: 
Sistani, M., Böckle, R., Wind, L., Eysin, K., Maeder, X., Schweizer, P., Michler, J., Lugstein, A., & Weber, W. M. (2021). Polycrystalline Ge Nanosheets Embedded in Metal‐Semiconductor Heterostructures Enabling Wafer‐Scale 3D Integration of Ge Nanodevices with Self‐Aligned Al Contacts. Advanced Electronic Materials, 7(5), 2100101. https://doi.org/10.1002/aelm.202100101
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Publisher DOI: 
10.1002/aelm.202100101
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Publication Type: 
Article - Original Research Article
en
Language: 
English
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Authors: 
Sistani, Masiar 
Böckle, Raphael 
Wind, Lukas 
Eysin, Kilian 
Maeder, Xavier 
Schweizer, Peter 
Michler, Johann 
Lugstein, Alois 
Weber, Walter M. 
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Organisational Unit: 
E362 - Institut für Festkörperelektronik 
E362-01 - Forschungsbereich Optoelektronische Materialien 
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Journal: 
Advanced Electronic Materials 
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ISSN: 
2199-160X
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Date (published): 
2021
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Number of Pages: 
9
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Publisher: 
WILEY
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Peer reviewed: 
Yes
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Keywords: 
Electronic, Optical and Magnetic Materials
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Research Areas: 
Materials Characterization: 33%
Surfaces and Interfaces: 33%
Nanoelectronics: 34%
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Science Branch: 
Elektrotechnik, Elektronik, Informationstechnik
Physik, Astronomie
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Appears in Collections:
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